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PDF MSC3130T1 Data sheet ( Hoja de datos )
| Número de pieza | MSC3130T1 | |
| Descripción | NPN RF Amplifier Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MSC3130T1
Preferred Device
NPN RF Amplifier Transistor
Surface Mount
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Symbol
PD
TJ
Tstg
Value
15
10
3.0
50
Max
200
150
−55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
—
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
VCEO
10
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
VEBO
3.0
DC Current Gain (Note 1)
(VCE = 4.0 Vdc, IC = 5.0 mAdc)
hFE 75
Collector−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 4.0 mAdc)
VCE(sat)
−
Current−Gain − Bandwidth Product
(VCB = 4.0 Vdc, IE = −5.0 mAdc)
fT
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. v 2%.
1.4
Max
1.0
−
−
400
0.5
2.5
Unit
mAdc
Vdc
Vdc
−
Vdc
GHz
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
2
1
3
SC−59
SUFFIX
CASE 318D
MARKING DIAGRAM
1S M
1S = Specific Device Code
M = Date Code
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MSC3130T1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MSC3130T1.PDF ] | |
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