Datasheet.kr   

MTD1P40E 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 MTD1P40E은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MTD1P40E 자료 제공

부품번호 MTD1P40E 기능
기능 Power MOSFET ( Transistor )
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


MTD1P40E 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 12 페이지수

미리보기를 사용할 수 없습니다

MTD1P40E 데이터시트, 핀배열, 회로
MTD1P40E
Preferred Device
Advance Information
Power MOSFET
1 Amp, 400 Volts
P−Channel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
1 AMPERES
400 VOLTS
RDS(on) = 8
P−Channel
D
G
S
MARKING
DIAGRAM
4
12
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
1P40E
PIN ASSIGNMENT
4
Drain
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. XXX
1
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD1P40E
MTD1P40E1
DPAK
DPAK
75 Units/Rail
75 Units/Rail
MTD1P40ET4
DPAK 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTD1P40E/D




MTD1P40E pdf, 반도체, 판매, 대치품
MTD1P40E
TYPICAL ELECTRICAL CHARACTERISTICS
1.8
1.6 TJ = 25°C
1.4
1.2
VGS = 10 V
8V 6V
5.5 V
1.0
0.8 5 V
0.6
0.4 4.5 V
0.2
0
0
4V
12 34 56 7 8 9
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 1. On−Region Characteristics
12
VGS = 10 V
10
TJ = 100°C
8
6 25°C
4
−55°C
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
2
VDS 10 V
1.5
TJ = −55°C
100°C
25°C
1
0.5
0
02 4 6 8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
6.0
5.8 TJ = 25°C
5.6
5.4 VGS = 10 V
5.2
15 V
5.0
4.8
4.6
4.4
4.2
4.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
ID, DRAIN CURRENT (AMPS)
2
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
1.75 ID = 0.5 A
1.5
1.25
1000
VGS = 0 V
TJ = 125°C
1 100
0.75
0.5
0.25
0
− 50
− 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
150
10
0
100 200 300 400
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
500
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
4

4페이지










MTD1P40E 전자부품, 판매, 대치품
MTD1P40E
SAFE OPERATING AREA
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100 µs
1
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
dc
0.1
0.1
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1
D = 0.5
48
44
40
36
32
28
24
20
16
12
8
4
0
25
ID = 1.0 A
50 75 100 125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
1.0E−03
1.0E−02
t, TIME (SECONDS)
1.0E−01
Figure 13. Thermal Response
1.0E+00
1.0E+01
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
7

7페이지


구       성 총 12 페이지수
다운로드[ MTD1P40E.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MTD1P40E

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵