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부품번호 | MTD1P40E 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 12 페이지수
MTD1P40E
Preferred Device
Advance Information
Power MOSFET
1 Amp, 400 Volts
P−Channel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
1 AMPERES
400 VOLTS
RDS(on) = 8 Ω
P−Channel
D
G
S
MARKING
DIAGRAM
4
12
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
1P40E
PIN ASSIGNMENT
4
Drain
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. XXX
1
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD1P40E
MTD1P40E1
DPAK
DPAK
75 Units/Rail
75 Units/Rail
MTD1P40ET4
DPAK 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTD1P40E/D
MTD1P40E
TYPICAL ELECTRICAL CHARACTERISTICS
1.8
1.6 TJ = 25°C
1.4
1.2
VGS = 10 V
8V 6V
5.5 V
1.0
0.8 5 V
0.6
0.4 4.5 V
0.2
0
0
4V
12 34 56 7 8 9
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 1. On−Region Characteristics
12
VGS = 10 V
10
TJ = 100°C
8
6 25°C
4
−55°C
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
2
VDS ≥ 10 V
1.5
TJ = −55°C
100°C
25°C
1
0.5
0
02 4 6 8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
6.0
5.8 TJ = 25°C
5.6
5.4 VGS = 10 V
5.2
15 V
5.0
4.8
4.6
4.4
4.2
4.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
ID, DRAIN CURRENT (AMPS)
2
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
1.75 ID = 0.5 A
1.5
1.25
1000
VGS = 0 V
TJ = 125°C
1 100
0.75
0.5
0.25
0
− 50
− 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
150
10
0
100 200 300 400
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
500
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
4
4페이지 MTD1P40E
SAFE OPERATING AREA
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100 µs
1
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
dc
0.1
0.1
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1
D = 0.5
48
44
40
36
32
28
24
20
16
12
8
4
0
25
ID = 1.0 A
50 75 100 125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
1.0E−03
1.0E−02
t, TIME (SECONDS)
1.0E−01
Figure 13. Thermal Response
1.0E+00
1.0E+01
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
7
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
MTD1P40E | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |