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What is NCS2005?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Rail-to-Rail Input-Output Operational Amplifier".


NCS2005 Datasheet PDF - ON Semiconductor

Part Number NCS2005
Description Rail-to-Rail Input-Output Operational Amplifier
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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NCS2005
Operational Amplifier, Low
Power, 8 MHz GBW,
Rail-to-Rail Input-Output
The NCS2005 provides high performance in a wide range of
applications. The NCS2005 offers beyond rail−to−rail input range, full
rail−to−rail output swing, large capacitive load driving ability, and low
distortion. The inputs can be driven by voltages that exceed both
power supply rails, thus eliminating concerns over exceeding the
common−mode voltage range. The rail−to−rail output swing
capability provides the maximum possible dynamic range at the
output. This is particularly important when operating on low supply
voltages.
Operating on supplies of 2.2 V to 32 V, the NCS2005 is excellent for
a very wide range of applications in low power systems. With a supply
current of 1.3 mA, the 8 MHz gain−bandwidth of this device supports
applications where faster speeds are required. Placing the amplifier
right at the signal source reduces board size and simplifies signal
routing. The NCS2005 is available in a space−saving 5−pin SOT−23
package.
Features
Wide Power Supply Range: 2.2 V to 32 V
Common Mode Voltage Range Wider than Rail−to−Rail:
VCM = −0.1 V to 5.1 V @ VS = 5 V
Wide Gain−bandwidth: 8 MHz typical
Low Supply Current: 1.3 mA typical
Stable with a 1 nF Capacitor Load with a Phase Margin over 25° @
VS = 10 V
Available in a Space−saving 5−pin SOT23 Package
These devices are Pb−free, Halogen free/BFR Free and are RoHS
Compliant
Typical Applications
Active Filters
Voltage Referenced Buffers
Sensors and Instrumentation
Microphone Amplifiers
ASIC Input Drivers
Portable Communications
PCMCIA Cards
www.onsemi.com
5
1
SOT23−5
SN SUFFIX
CASE 483
MARKING DIAGRAM
5
JFKAYWG
G
1
JFK = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN DIAGRAM
OUT 1
V− 2
IN+ 3
+−
5 V+
4 IN −
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NCS2005SN1T1G SOT−23 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 1
1
Publication Order Number:
NCS2005/D

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NCS2005 equivalent
NCS2005
Table 7. ELECTRICAL CHARACTERISTICS AT 2.7 V SUPPLY Unless otherwise noted, values are referenced to TA = 25°C, V+ =
2.7 V, V− = 0 V, VCM = V+/2, and RL 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C, unless otherwise noted. (Notes 12, 13)
Parameter
Test Conditions
Symbol Min Typ Max Units
SUPPLY CHARACTERISTICS
Quiescent Supply Current
Power Supply Rejection Ratio
INPUT CHARACTERISTICS
No load
VS = 2.7 V to 30 V
IS 1.25
PSRR
70
113
mA
dB
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Input Resistance
Input Capacitance
Common Mode Rejection Ratio
OUTPUT CHARACTERISTICS
VCM = 0 V
VCM = 2.7 V
VCM = 0 V
VCM = 2.7 V
VCM = V− to V+
VOS
DV/DT
IIB
IOS
RIN
CIN
CMRR
58
0.2
1
45
45
2
2
90
3
96
6 mV
6
mV/°C
nA
nA
MW
pF
dB
High−Level Output Voltage
Low−Level Output Voltage
Output Current Capability
IL = 2.7 mA
IL = 2.7 mA
Sourcing current
Sinking current
VOH 2.50 2.60
V
VOL 100 130 mV
IOUT 12 mA
20
DYNAMIC PERFORMANCE
Open Loop Voltage Gain
Gain−Bandwidth Product
Gain Margin
Phase Margin
Slew Rate
Total Harmonic Distortion Plus Noise
NOISE PERFORMANCE
RL = 10 kW
RL = 10 kW
RL = 10 kW
RL = 10 kW
RL = 10 kW
fIN = 1 kHz, AV = 2, RL = 2 kW
AVOL
GBWP
AM
yM
SR
THD+n
73
114
8.5
6
60
2.6
0.05
dB
MHz
dB
°
V/ms
%
Voltage Noise Density
f = 1kHz
eN 45 nV/Hz
12. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
13. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C.
www.onsemi.com
5


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Part Details

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