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NCV20063 데이터시트 PDF




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NCV20063 데이터시트, 핀배열, 회로
NCS20061, NCV20061,
NCS20062, NCV20062,
NCS20064, NCV20064
Operational Amplifier,
Rail-to-Rail Input and
Output, 3 MHz
The NCS2006 series operational amplifiers provide rail−to−rail
input and output operation, 3 MHz bandwidth, and are available in
single, dual, and quad configurations. Rail−to−rail operation gives
designers use of the entire supply voltage range while taking
advantage of the 3 MHz bandwidth. The NCS2006 can operate on
supply voltages from 1.8 to 5.5 V over a temperature range from
−40°C to 125°C. At a 1.8 V supply, this device has a slew rate of 1.2
V/ms while consuming only 125 mA of quiescent current per channel.
Since this is a CMOS device, high input impedance and low bias
currents make it ideal for interfacing to a wide variety of signal
sensors. The NCS2006 devices are available in a variety of compact
packages.
Features
Rail−to−Rail Input and Output
Wide Supply Range: 1.8 to 5.5 V
Wide Bandwidth: 3 MHz
High Slew Rate: 1.2 V/ms at VS = 1.8 V
Low Supply Current: 125 mA per Channel at VS = 1.8 V
Low Input Bias Current: 1 pA Typical
Wide Temperature Range: −40°C to 125°C
Available in a Variety of Packages
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Unity Gain Buffer
Battery Powered / Low Quiescent Current Applications
Low Cost Current Sensing
Automotive
www.onsemi.com
SC70−5
CASE 419A
5
1
TSOP−5/SOT23−5
CASE 483
Micro8]/MSOP8
CASE 846A
8
1
SOIC−8
CASE 751
TSSOP−8
CASE 948S
14
1
SOIC−14
CASE 751A
14
1
TSSOP−14
CASE 948G
6
1
UDFN6
CASE 517AP
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 4
1
Publication Order Number:
NCS2006/D




NCV20063 pdf, 반도체, 판매, 대치품
NCS20061, NCV20061, NCS20062, NCV20062, NCS20064, NCV20064
ABSOLUTE MAXIMUM RATINGS (Note 1)
Rating
Symbol
Limit
Unit
Supply Voltage (VDD – VSS) (Note 2)
Input Voltage
Differential Input Voltage
Maximum Input Current
Maximum Output Current
Continuous Total Power Dissipation (Note 2)
Maximum Junction Temperature
Storage Temperature Range
Mounting Temperature (Infrared or Convection – 20 sec)
ESD Capability (Note 3)
Human Body Model
Machine Model
Charge Device Model
VS
VI
VID
II
IO
PD
TJ
TSTG
Tmount
ESDHBM
ESDMM
ESDCDM
7
VSS − 0.5 to VDD + 0.5
±Vs
±10
±100
200
150
−65 to 150
260
2000
100
2000
V
V
V
mA
mA
mW
°C
°C
°C
V
Latch−Up Current (Note 4)
Moisture Sensitivity Level (Note 5)
ILU
MSL
100
Level 1
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS for Safe Operating Area.
2. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability.
Shorting output to either VDD or VSS will adversely affect reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
4. Latch−up Current tested per JEDEC standard: JESD78
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J-STD-020A
THERMAL INFORMATION
Parameter
Symbol
Channels
Package
Single Layer
Board (Note 6)
Multi−Layer
Board (Note 7)
SC−70
Single
SOT23−5/TSOP−5
UDFN6
Junction to Ambient
Thermal Resistance
qJA
Dual
Micro8/MSOP8
SOIC−8
TSSOP−8
236
190
253
167
131
194
SOIC−14
Quad
SOP−14
TSSOP−14
6. Value based on 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
7. Value based on 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area
Unit
°C/W
OPERATING RANGES
Parameter
Symbol
Min
Max Unit
Operating Supply Voltage
VS 1.8
5.5 V
Differential Input Voltage
VID VS V
Input Common Mode Range
VICM
VSS – 0.2
VDD + 0.2
V
Ambient Temperature
TA −40
125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
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NCV20063 전자부품, 판매, 대치품
NCS20061, NCV20061, NCS20062, NCV20062, NCS20064, NCV20064
ELECTRICAL CHARACTERISTICS AT VS = 5.5 V
TA = 25°C; RL 10 kW; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 10)
Parameter
Symbol
Conditions
Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage
VOS
0.5 3.5 mV
4 mV
Offset Voltage Drift
Input Bias Current (Note 10)
DVOS/DT
IIB
1 mV/°C
1 pA
1500
pA
Input Offset Current (Note 10)
IOS
1 pA
1100
pA
Channel Separation
XTLK
DC
125 dB
Differential Input Resistance
Common Mode Input Resistance
Differential Input Capacitance
Common Mode Input Capacitance
Common Mode Rejection Ratio
OUTPUT CHARACTERISTICS
RID
RIN
CID
CCM
CMRR
VCM = VSS – 0.2 to VDD + 0.2
VCM = VSS + 0.2 to VDD − 0.2
10
10
1
5
55 79
51
GW
GW
pF
pF
dB
Open Loop Voltage Gain
AVOL
90 120
86
dB
Short Circuit Current
ISC Output to positive rail, sinking current
Output to negative rail, sourcing current
19 mA
15
Output Voltage High
VOH Voltage output swing from positive rail
3 24 mV
25
Output Voltage Low
VOL Voltage output swing from negative rail
3 24 mV
25
AC CHARACTERISTICS
Unity Gain Bandwidth
UGBW
3 MHz
Slew Rate at Unity Gain
Phase Margin
Gain Margin
Settling Time
SR VID = 5 Vpp, Gain = 1
ym
Am
tS
VIN = 5 Vpp,
Settling time to 0.1%
Gain = 1
Settling time to 0.01%
1.2
60
10
2.3
3.1
V/ms
°
dB
ms
Open Loop Output Impedance
NOISE CHARACTERISTICS
ZOL
f = 100 Hz
0.05 W
Total Harmonic Distortion plus Noise
Input Referred Voltage Noise
THD+N
en
VIN = 5 Vpp, f = 1 kHz, Av = 1
f = 1 kHz
f = 10 kHz
0.005
20
15
%
nV/Hz
Input Referred Current Noise
SUPPLY CHARACTERISTICS
in
f = 1 kHz
300 fA/Hz
Power Supply Rejection Ratio
PSRR
No Load
67 90
dB
64
Power Supply Quiescent Current
IDD
Per channel, no load
140 200
mA
10. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
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