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부품번호 | NTP4804N 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
NTP4804N
Power MOSFET
30 V, 133 A, Single N−Channel, TO−220
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices*
Applications
• AC–DC Converters
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
(CNuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJC
Steady
State
Power Dissipation
RqJC
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
TC = 25°C
VDSS
VGS
ID
PD
ID
PD
30 V
±20 V
21 A
13
3.0 W
133 A
85
120 W
Pulsed Drain
Current
Current Limited by
Package
TA = 25°C,
tp = 10 ms
TA = 25°C
IDM
IDmaxPkg
350
45
A
A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
+175
°C
Source Current (Body Diode)
Drain to Source DV/DT
IS
dV/dt
78 A
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 56 A, L = 0.3 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
474 mJ
260 °C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
ID MAX
133 A
N−Channel
D
G
4
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
12
3
TO−220AB
CASE 221A
STYLE 5
NTP4804NG
AYWW
1
Gate
2
Drain
3
Source
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 0
1
Publication Order Number:
NTP4804N/D
NTP4804N
TYPICAL CHARACTERISTICS
250
225 10 V
200
VGS = 7, 6, 5.8, 5.5, 5.2, 5 V
4.5 V
175
150
125 4.0 V
100 TJ = 25°C
75
50 3.5 V
25
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
240
VDS ≥ 10 V
200
160
120
80
TJ = 125°C
40 TJ = 25°C
0 TJ = −55°C
01 23 456
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
7
0.0050
0.0048
0.0046
ID = 30 A
TJ = 25°C
0.010
0.009
0.008
TJ = 25°C
0.0044
0.0042
0.007
0.006
VGS = 4.5 V
0.0040
0.005
0.0038
0.0036
0.004
0.003
VGS = 10 V
0.0034
0.002
0.0032
0.001
0.0030
0
4 5 6 7 8 9 10 15 35 55 75 95 115 135 155 175 195 215 235 255
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Drain Current
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6 ID = 30 A
1.5 VGS = 10 V
1.4
1.3
1.2
100,000
VGS = 0 V
10,000
1000
TJ = 150°C
1.1
1.0
0.9
0.8
0.7
−50 −25 0 25 50 75 100 125 150 175
100
10
2
TJ = 100°C
6 10 14 18 22 26 30
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NTP4804N | Power MOSFET ( Transistor ) | ON Semiconductor |
NTP4804NG | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |