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PDF IRF830 Data sheet ( Hoja de datos )
| Número de pieza | IRF830 | |
| Descripción | Power Field Effect Transistor | |
| Fabricantes | ON Semiconductor | |
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Hay una vista previa y un enlace de descarga de IRF830 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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IRF830
Power Field Effect
Transistor
N−Channel Enhancement Mode
Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) to Minimize On−Losses, Specified at Elevated
Temperature
• Rugged — SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use with Inductive Loads
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage
Drain Current
Continuous, TC = 25°C
Continuous, TC = 100°C
Peak, TC = 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction−to−Case
— Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from Case
for 5 Seconds
Symbol
VDSS
VDGR
VGS
ID
PD
TJ, Tstg
Value
500
500
"20
4.5
3.0
18
75
0.6
−55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
RθJC
RθJA
TL
°C/W
1.67
62.5
300 °C
http://onsemi.com
TMOS POWER FET
4.5 AMPERES, 500 VOLTS
RDS(on) = 1.5 Ω
N−Channel
D
®G
S
4
12 3
TO−220AB
CASE 221A
STYLE 5
PIN ASSIGNMENT
1 Gate
2 Drain
3 Source
4 Drain
See the MTM4N45 Data Sheet for a complete set of design curves for the
product on this data sheet. Design curves of the MTP4N45 are applicable for
this product.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
ORDERING INFORMATION
Device
Package
Shipping
IRF830
TO−220AB
50 Units/Rail
Publication Order Number:
IRF830/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IRF830.PDF ] | |
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