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MMDF2C02HD PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MMDF2C02HD
기능 Power MOSFET
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MMDF2C02HD 데이터시트, 핀배열, 회로
MMDF2C02HD
Preferred Device
Power MOSFET
2 Amps, 20 Volts
Complementary SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dcdc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
DraintoGate Voltage (RGS = 1.0 mΩ)
Drain Current Continuous NChannel
PChannel
Pulsed
NChannel
PChannel
VDSS
VGS
VDGR
ID
IDM
20
± 20
20
3.8
3.3
19
20
Vdc
Vdc
Vdc
A
Operating and Storage Temperature Range
TJ, Tstg 55
to 150
°C
Total Power Dissipation @ TA= 25°C (Note 2.)
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 V, VGS = 5.0 V, Peak IL = 9.0 A,
L = 10 mH, RG = 25 Ω) NChannel
(VDD = 20 V, VGS = 5.0 V, Peak IL = 6.0 A,
L = 18 mH, RG = 25 Ω) PChannel
Thermal Resistance Junction to Ambient
(Note 2.)
PD
EAS
RθJA
2.0 Watts
mJ
405
324
62.5 °C/W
Maximum Lead Temperature for Soldering,
TL 260 °C
0.0625from case. Time in Solder Bath is
10 seconds.
1. Negative signs for PChannel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
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2 AMPERES
20 VOLTS
RDS(on) = 90 mW (NChannel)
RDS(on) = 160 mW (PChannel)
NChannel
D
PChannel
D
GG
SS
MARKING
DIAGRAM
8
SO8, Dual
CASE 751
STYLE 14
D2C02
LYWW
1
D2C02 = Device Code
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
NSource
NGate
PSource
PGate
18
27
36
45
Top View
NDrain
NDrain
PDrain
PDrain
ORDERING INFORMATION
Device
Package
Shipping
MMDF2C02HDR2 SO8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 7
1
Publication Order Number:
MMDF2C02HD/D




MMDF2C02HD pdf, 반도체, 판매, 대치품
MMDF2C02HD
TYPICAL ELECTRICAL CHARACTERISTICS
NChannel
PChannel
6
VGS = 10 V
5 4.5 V
3.9 V
3.5 V
3.7 V
3.3 V
TJ = 25°C
4
3.1 V
3
2.9 V
2
2.7 V
1
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
4
VGS = 10 V 4.5 V
3.9 V
3.7 V TJ = 25°C
3.5 V
3
3.3 V
2
3.1 V
1 2.9 V
2.7 V
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
6
VDS 10 V
4
TJ = 100°C
25°C
2
− 55°C
0
1 1.4 1.8 2.2 2.6 3 3.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
VDS 10 V
3
2
1
100°C
25°C
0
1.0 1.5
TJ = − 55°C
2.0 2.5 3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
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MMDF2C02HD 전자부품, 판매, 대치품
MMDF2C02HD
NChannel
1400
VDS = 0 V
1200 Ciss
1000
VGS = 0 V
TJ = 25°C
800
Crss
600
400
200
Ciss
Coss
Crss
10 5 0 5 10 15 20
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
PChannel
1200
VDS = 0 V
1000 Ciss
VGS = 0 V
TJ = 25°C
800
600
Crss
400
Ciss
200
0
10
Coss
Crss
505
VGS VDS
10 15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
12 24
QT
10 20
VGS
8 16
6
4 Q1
Q2
ID = 3 A
TJ = 25°C
12
8
24
Q3 VDS
00
0 2 4 6 8 10 12 14
QT, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
12
10
8 VDS
QT
VGS
18
15
12
69
4 Q1
2
Q2
ID = 2 A
TJ = 25°C
6
3
Q3
0
04
0
8 12 16
QT, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
100
VDD = 10 V
ID = 3 A
VGS = 10 V
TJ = 25°C
tr
td(off)
10 tf
td(on)
1
1 10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
1000
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
100
10
100 1
td(off)
tf
tr
td(on)
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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