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MMDFS2P102 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MMDFS2P102
기능 Power MOSFET
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MMDFS2P102 데이터시트, 핀배열, 회로
MMDFS2P102
Power MOSFET
2 Amps, 20 Volts
PChannel SO8, FETKYt
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs packaged with industry leading, low forward drop,
low leakage Schottky Barrier rectifiers to offer high efficiency
components in a space saving configuration. Independent pinouts for
MOSFET and Schottky die allow the flexibility to use a single
component for switching and rectification functions in a wide variety
of applications such as Buck Converter, BuckBoost, Synchronous
Rectification, Low Voltage Motor Control, and Load Management in
Battery Packs, Chargers, Cell Phones and other Portable Products.
Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
Logic Level Gate Drive Can be Driven by Logic ICs
Mounting Information for SO8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
(Note 1.)
Rating
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage Continuous
Drain Current (Note 3.)
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tp v 10 ms)
Total Power Dissipation @ TA = 25°C
(Note 2.)
Symbol
VDSS
VDGR
VGS
Value
20
20
"20
Unit
Vdc
Vdc
Vdc
ID 3.3 Adc
ID 2.1
IDM 20 Apk
PD 2.0 Watts
Single Pulse DraintoSource Avalanche
Energy STARTING TJ = 25°C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20
Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W
EAS
324 mJ
1. Negative sign for Pchannel device omitted for clarity.
2. Pulse Test: Pulse Width 250 μs, Duty Cycle 2.0%.
3. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided),
10 sec. max.
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2 AMPERES
20 VOLTS
RDS(on) = 160 mW
VF = 0.39 Volts
PChannel
D
G
S
MARKING
DIAGRAM
SO8
8 CASE 751
STYLE 18
1
2P102
LYWW
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
Anode
Anode
Source
Gate
18
27
36
45
Top View
Cathode
Cathode
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMDFS2P102R2 SO8 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MMDFS2P102/D




MMDFS2P102 pdf, 반도체, 판매, 대치품
MMDFS2P102
TYPICAL FET ELECTRICAL CHARACTERISTICS
4.0 4.0
10 V 4.5 V 3.8 V
TJ = 25°C
VDS 10 V
3.0 3.0
2.0 3.1 V 2.0
1.0
VGS = 2.4 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
1.0
0
1.0
25°C
100°C
TJ = − 55°C
1.5 2.0 2.5 3.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
3.5
0.6 0.20
TJ = 25°C
TJ = 25°C
0.5 ID = 1.0 A
0.16 VGS = 4.5 V
0.4
0.3
0.2
0.1
0
0 2.0 4.0 6.0 8.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
0.12
10 V
0.08
0.04
10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1.6
VGS = 10 V
1.4 ID = 2.0 A
100
VGS = 0 V
TJ = 125°C
1.2
10
1.0
0.8
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
1.0
0
100°C
5.0 10 15
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
20
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MMDFS2P102 전자부품, 판매, 대치품
MMDFS2P102
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
1E−2
TJ = 125°C
1E−3
85°C
1E−4
1E−5
25°C
1E−6
1E−7
0
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Typical Reverse Current
1E−1
1E−2
1E−3
1E−4
1E−5
1E−6
20 0
TJ = 125°C
25°C
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 18. Maximum Reverse Current
20
1000
TYPICAL CAPACITANCE AT 0 V = 170 pF
100
10
0 5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 19. Typical Capacitance
1.6
dc
1.4
FREQ = 20 kHz
1.2 SQUARE WAVE
1.0 Ipk/Io = p
0.8
Ipk/Io = 5.0
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
20 0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Figure 20. Current Derating
0.7
0.6
Ipk/Io = p
0.5
Ipk/Io = 5.0
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
SQUARE
WAVE
dc
0.1
0
0 0.5 1.0 1.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 21. Forward Power Dissipation
2.0
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