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PDF MTDF1C02HD Data sheet ( Hoja de datos )
| Número de pieza | MTDF1C02HD | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MTDF1C02HD
Preferred Device
Power MOSFET
1 Amp, 20 Volts
Complementary Micro8t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc−dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Miniature Micro8 Surface Mount Package − Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P−Channel devices omitted for clarity
Rating
Symbol Max
Drain−to−Source Voltage
N−Channel
P−Channel
VDSS
20
20
Drain−to−Gate Voltage (RGS = 1.0 MW)
N−Channel
P−Channel
VDGR
20
20
Gate−to−Source Voltage − Continuous
N−Channel
P−Channel
VGS
±8.0
±8.0
Operating and Storage Temperature Range
TJ and
Tstg
−55 to
150
Unit
V
V
V
°C
http://onsemi.com
1 AMPERE, 20 VOLTS
RDS(on) = 120 mW (N−Channel)
1 AMPERE, 20 VOLTS
RDS(on) = 175 mW (P−Channel)
7
D
N−Channel
8
5
D
P−Channel
6
2
G
1S
4
G
3S
MARKING
DIAGRAM
8
Micro8
CASE 846A
WW
STYLE 2
CA
1
WW = Date Code
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MTDF1C02HDR2 Micro8 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MTDF1C02HD/D
1 page  
MTDF1C02HD
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
4.0
TJ = 25°C
VGS = 10 V
3.0 4.5 V
2.7 V
1.9 V
2.3 V
2.1 V
2.0
1.7 V
1.0 1.5 V
0
0 0.4 0.8 1.2 1.6 2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4.0
VGS = 8
4.5 V
3.0
3.7 V
3.3 V
2.0
P−Channel
3.1 V
2.9 V
2.7 V
TJ = 25°C
2.5 V
2.3 V
1.0 2.1 V
1.9 V
1.7 V
0
0 0.4 0.8 1.2 1.6 2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4.0
VDS ≥ 10 V
3.0
4.0
VDS ≥ 10 V
3.0
2.0 2.0
100°C
1.0
0
0.5
1.0
25°C
TJ = −55°C
1.5 2.0
1.0
0
2.5 0
100°C
25°C
TJ = −55°C
1.0 2.0 3.0
4.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 2. Transfer Characteristics
http://onsemi.com
5
5 Page 
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
1.0
SINGLE PULSE
0.1
1.0E−05
1.0E−04
MTDF1C02HD
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E−03
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
Figure 13. Thermal Response
1.0E+01
1.0E+02
1.0E+03
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MTDF1C02HD.PDF ] | |
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