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MTDF1N03HD PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MTDF1N03HD
기능 Power MOSFET
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MTDF1N03HD 데이터시트, 핀배열, 회로
MTDF1N03HD
Preferred Device
Power MOSFET
1 Amp, 30 Volts
NChannel Micro8t, Dual
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
8
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1 AMPERE
30 VOLTS
RDS(on) = 120 mW
NChannel
D
G
S
MARKING
DIAGRAM
Micro8, Dual
CASE 846A
STYLE 2
1
WW
BB
WW = Date Code
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
18
27
36
45
Top View
Drain1
Drain1
Drain2
Drain2
ORDERING INFORMATION
Device
Package
Shipping
MTDF1N03HDR2 Micro8 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 6
1
Publication Order Number:
MTDF1N03HD/D




MTDF1N03HD pdf, 반도체, 판매, 대치품
MTDF1N03HD
TYPICAL ELECTRICAL CHARACTERISTICS
4 VGS = 10 V
3
6V
4.5 V
3.9 V
3.7 V
TJ = 25°C
3.5 V
3.3 V
2 3.1 V
2.9 V
1 2.7 V
2.5 V
2.3 V
0
0 0.5 1 1.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. OnRegion Characteristics
2
4
VDS 10 V
3
2
1 100°C
25°C
TJ = −55°C
0
1.5 2 2.5 3 3.5 4 4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.6 0.18
0.5
ID = 1.7 A
TJ = 25°C
TJ = 25°C
0.16
VGS = 4.5
0.4
0.14
0.3
0.12
0.2
10 V
0.1 0.1
0
02 4 6 8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance versus
GatetoSource Voltage
0.08
10 0
12 3
ID, DRAIN CURRENT (AMPS)
4
Figure 6. OnResistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 0.85 A
2.0
1.5
1.0
0.5
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. OnResistance Variation
with Temperature
100
VGS = 0 V
10
1
TJ = 125°C
100°C
25°C
0.1
0 5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. DraintoSource Leakage Current
versus Voltage
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MTDF1N03HD 전자부품, 판매, 대치품
MTDF1N03HD
di/dt = 300 A/μs
Standard Cell Density
trr
High Cell Density
trr
ta
tb
t, TIME
Figure 13. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curve (Figure
14) defines the maximum simultaneous draintosource
voltage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (TC) of
25°C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
Resistance General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RθJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 16). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
1
10 μs
100 μs
1 ms
10 ms
200
160
120
80
VDD = 30 V
VGS = 10 V
IL = 2.4 A
L = 69 mH
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
100
40
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 15. Maximum Avalanche Energy versus
Starting Junction Temperature
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MTDF1N03HD

Power MOSFET

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