Datasheet.kr   

MTP6N60E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MTP6N60E
기능 Power Field Effect Transistor
제조업체 ON Semiconductor
로고 ON Semiconductor 로고 


전체 8 페이지

		

No Preview Available !

MTP6N60E 데이터시트, 핀배열, 회로
MTP6N60E
Power Field Effect
Transistor
NChannel EnhancementMode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
TO220AB
CASE 221A09
Style 5
D
G
S
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 7
1
Publication Order Number:
MTP6N60E/D




MTP6N60E pdf, 반도체, 판매, 대치품
MTP6N60E
TYPICAL ELECTRICAL CHARACTERISTICS
12
TJ = 25°C
10
8
VGS = 10 V
6V
7V
8V
12
VDS 10 V
10
8
6
5V
4
2
4V
0
0 2 4 6 8 10 12 14 16 18
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
6
4
2
100°C
25°C
TJ = - 55°C
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 10 V
2.0
1.5
1.0
0.5
TJ = 100°C
25°C
- 55°C
0
0 2 4 6 8 10 12
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
1.4
TJ = 25°C
1.3
1.2
1.1 VGS = 10 V
1.0
15 V
0.9
0.8
0 2 4 6 8 10 12
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 3 A
2
1.5
1
0.5
10000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
0
- 50 - 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 5. OnResistance Variation with
Temperature
150
1
0 100 200 300 400 500 600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
http://onsemi.com
4

4페이지










MTP6N60E 전자부품, 판매, 대치품
MTP6N60E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 μs
100 μs
1 ms
1.0 10 ms
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
450
400 ID = 6 A
350
300
250
200
150
100
50
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.001
0.01
t, TIME (SECONDS)
0.1
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
1 10
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
7

7페이지



구       성총 8 페이지
다운로드[ MTP6N60E.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
MTP6N60

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

ST Microelectronics
ST Microelectronics
MTP6N60

Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵