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부품번호 | MTP6N60E 기능 |
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기능 | Power Field Effect Transistor | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
MTP6N60E
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
TO−220AB
CASE 221A−09
Style 5
D
G
S
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 7
1
Publication Order Number:
MTP6N60E/D
MTP6N60E
TYPICAL ELECTRICAL CHARACTERISTICS
12
TJ = 25°C
10
8
VGS = 10 V
6V
7V
8V
12
VDS ≥ 10 V
10
8
6
5V
4
2
4V
0
0 2 4 6 8 10 12 14 16 18
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
6
4
2
100°C
25°C
TJ = - 55°C
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 10 V
2.0
1.5
1.0
0.5
TJ = 100°C
25°C
- 55°C
0
0 2 4 6 8 10 12
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
1.4
TJ = 25°C
1.3
1.2
1.1 VGS = 10 V
1.0
15 V
0.9
0.8
0 2 4 6 8 10 12
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 3 A
2
1.5
1
0.5
10000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
0
- 50 - 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 5. On−Resistance Variation with
Temperature
150
1
0 100 200 300 400 500 600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
4
4페이지 MTP6N60E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 μs
100 μs
1 ms
1.0 10 ms
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
450
400 ID = 6 A
350
300
250
200
150
100
50
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.001
0.01
t, TIME (SECONDS)
0.1
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
1 10
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
7
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부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |