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RP1L080SN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 RP1L080SN
기능 4V Drive Nch MOSFET
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RP1L080SN 데이터시트, 핀배열, 회로
Data Sheet
4V Drive Nch MOSFET
RP1L080SN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1L080SN
Taping
TR
1000
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
8.0
32
1.6
32
2.0
150
55to150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
2
1
(1) (2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A




RP1L080SN pdf, 반도체, 판매, 대치품
RP1L080SN
 
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
1
Ta=125°C
Ta=75°C
0.1 Ta=25°C
Ta=-25°C
0.01
0.001
0.01
0.1
1
Drain Current : ID[A]
10
100
Fig.9 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10
Ta=125°C
1 Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.0
10000
1000
100
10
1
0.01
0.5 1.0
Source-Drain Voltage : VSD [V]
1.5
Fig.11 Switching Characteristics
tf
td(off)
VDD30V
VGS=10V
RG=25Ω
Ta=25°C
Pulsed
td(on)
tr
0.1 1
Drain Current : ID [A]
10
Fig.8 Typical Transfer Characteristics
100
VDS=10V
pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
0.1 Ta=-25°C
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
80
Ta=25°C
70 pulsed
60 ID=8.0A
50 ID=4.0A
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.12 Dynamic Input Characteristics
12
Ta=25°C
VDD=30V
10 ID=8A
Pulsed
8
6
4
2
0
0 5 10 15 20 25 30 35 40
Total Gate Charge : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.08 - Rev.A

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RP1L080SN 전자부품, 판매, 대치품
Notes
Notice
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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RP1L080SN

4V Drive Nch MOSFET

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