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PDF AOI468 Data sheet ( Hoja de datos )
| Número de pieza | AOI468 | |
| Descripción | 11.5A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOD468 & AOI468 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
350V@150℃
11.5A
<0.42Ω
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
300
±30
11.5
8.3
29
3.8
216
430
5
150
1
-50 to 175
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
0.7
Maximum
55
0.5
1
D
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2010
www.aosmd.com
Page 1 of 6
1 page  
AOD468/AOI468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
150
120
90
60
30
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note B)
175
12
9
6
3
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Current De-rating (Note B)
175
400
300 TA=25°C
200
100
0
0.01
0.1 1 10 100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1000
0.1
0.01
0.001
0.0001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01 0.1 1 10 100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1000
10000
Rev0: Dec 2010
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOI468.PDF ] | |
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