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RP1E070XN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 RP1E070XN
기능 4V Drive Nch MOSFET
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RP1E070XN 데이터시트, 핀배열, 회로
Data Sheet
4V Drive Nch MOSFET
RP1E070XN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1E070XN
Taping
TR
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID 7
IDP *1
18
IS 1.6
ISP *1
18
PD *2
2.0
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
2
1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Limits
Rth (ch-a)* 62.5
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.02 - Rev.A




RP1E070XN pdf, 반도체, 판매, 대치품
RP1E070XN
1000
100
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current()
VGS= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
10
VGS=0V
Pulsed
10
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0
1000
100
0.5 1
SOURCE-DRAIN VOLTAGE : VSD [V]
1.5
Fig.11 Switching Characteristics
td(off)
tf
Ta=25°C
VDD= 15V
VGS=10V
RG=10Ω
Pulsed
td(on)
10
1
0.01
tr
0.1 1
DRAIN-CURRENT : ID[A]
10
  Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
100
VDS= 10V
Pulsed
10
1
0.1
0.01
50
40
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1 1
DRAIN-CURRENT : ID[A]
10
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
ID= 3.5A
ID= 7.0A
Ta=25°C
Pulsed
30
20
10
0
0
10
2468
GATE-SOURCE VOLTAGE : VGS[V]
10
Fig.12 Dynamic Input Characteristics
8
6
4
Ta=25°C
2 VDD= 15V
ID= 7A
Pulsed
0
0 2 4 6 8 10 12
TOTAL GATE CHARGE : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.02 - Rev.A

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RP1E070XN 전자부품, 판매, 대치품
Notes
Notice
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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RP1E070XN

4V Drive Nch MOSFET

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