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RP1E100XN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 RP1E100XN
기능 4V Drive Nch MOSFET
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RP1E100XN 데이터시트, 핀배열, 회로
4V Drive Nch MOSFET
RP1E100XN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1E100XN
Taping
TR
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
30
20
10
36
1.6
36
2.0
150
Range of storage temperature
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5)
(4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
2
1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol Limits
Rth (ch-a)* 62.5
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.09 - Rev.A




RP1E100XN pdf, 반도체, 판매, 대치품
RP1E100XN
Data Sheet
50
Ta=25°C
Pulsed
40
ID= 5.0A
30
ID= 10.0A
20
10
0
0 5 10
GATE-SOURCE VOLTAGE : VGS [V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
100
10
td(off)
tf
tr
Ta=25°C
VDD=15V
VGS=10V
RG=10
Pulsed
1
0.01
0.1
td(on)
1 10
100
DRAIN-CURRENT : ID[A]
Fig.11 Switching Characteristics
10
8
6
4 Ta=25°C
VDD=15V
2 ID= 10A
RG=10
0 Pulsed
0 5 10 15 20
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
1000
Ciss
Crss
100
Ta=25°C
f=1MHz
Coss
10 VGS=0V
0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
10
1000
100
Operation in this area is limited by RDS(ON)
(VGS=10V)
PW=100us
10
1
0.1
0.01
Ta = 25°C
Single Pulse
Mounted on a CERAMIC board
0.1 1 10
PW=1ms
PW = 10ms
DC operation
100
DRAIN-SOURCE VOLTAGE : VDS [V]
Fig.14 Maximum Safe Operating Aera
1
0.1
0.01
0.001
0.001
0.01
0.1
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a CERAMIC board>
1 10 100 1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.09 - Rev.A

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부품번호상세설명 및 기능제조사
RP1E100XN

4V Drive Nch MOSFET

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