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부품번호 | RP1E125XN 기능 |
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기능 | 4V Drive Nch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 7 페이지수
Data Sheet
4V Drive Nch MOSFET
RP1E125XN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1E125XN
Taping
TR
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID 12.5
IDP *1
36
IS 1.6
ISP *1
36
PD *2
2.0
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Limits
Rth (ch-a)* 62.5
Unit
C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.04 - Rev.A
RP1E125XN
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
1
Ta=125°C
0.1 Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.001
0.01
0.1 1
Drain Current : ID [A]
10
100
Fig.9 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10
Ta=125°C
1 Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.0
10000
1000
100
0.5 1.0 1.5
Source-Drain Voltage : VSD [V]
2.0
Fig.11 Switching Characteristics
tf
td(off)
VDD≒15V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
10
1
0.01
td(on)
tr
0.1 1 10
Drain Current : ID [A]
100
Fig.8 Typical Transfer Characteristics
100
VDS=10V
pulsed
10
Ta=125°C
1 Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
50
Ta=25°C
pulsed
40
30
ID=6.3A
ID=12.5A
20
10
0
0
2468
Gate-Source Voltage : VGS [V]
10
Fig.12 Dynamic Input Characteristics
10
Ta=25°C
VDD=15V
ID=12.5A
8 Pulsed
6
4
2
0
0 5 10 15 20 25
Total Gate Charge : Qg [nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.04 - Rev.A
4페이지 Notes
Notice
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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RP1E125XN | 4V Drive Nch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |