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RP1H065SP PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 RP1H065SP
기능 4V Drive Pch MOSFET
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RP1H065SP 데이터시트, 핀배열, 회로
Data Sheet
4V Drive Pch MOSFET
RP1H065SP
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1H065SP
Taping
TR
1000
Absolute maximum ratings (Ta = 25˚C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Range of storage temperature
Tstg
Limits
45
20
6.5
26
1.6
26
2.0
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
2
1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a) *
Limits
62.5
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A




RP1H065SP pdf, 반도체, 판매, 대치품
RP1H065SP
 
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=-10V
pulsed
10
Ta=125°C
1 Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1 1
Drain Current : -ID [A]
10
Fig.9 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
1
Ta=125°C
Ta=75°C
0.1
Ta=25°C
Ta=-25°C
0.01
0.001
0.0001
0.0
10000
1000
100
10
0.5
Source-Drain Voltage : -VSD [V]
1.0
Fig.11 Switching Characteristics
VDD-25V
VGS=-10V
RG=10Ω
Ta=25°C
Pulsed
tf
td(off)
td(on)
tr
1
0.01
0.1 1
Drain Current : -ID [A]
10
Fig.8 Typical Transfer Characteristics
10
VDS=-10V
pulsed
1
0.1
0.01
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.001
0.0001
0.0
0.5 1.0 1.5 2.0
Gate-Source Voltage : -VGS [V]
2.5
3.0
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
90
Ta=25°C
pulsed
80
70
ID=-3.25A
60
ID=-6.5A
50
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : -VGS [V]
Fig.12 Dynamic Input Characteristics
10
9
Ta=25°C
VDD=-25V
8
ID=-6.5A
Pulsed
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Total Gate Charge : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.08 - Rev.A

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RP1H065SP 전자부품, 판매, 대치품
Notes
Notice
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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RP1H065SP

4V Drive Pch MOSFET

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