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부품번호 | RP1L055SN 기능 |
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기능 | 4V Drive Nch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 7 페이지수
Data Sheet
4V Drive Nch MOSFET
RP1L055SN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1L055SN
Taping
TR
1000
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
5.5
22
1.6
22
2.0
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a) *
Limits
62.5
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
RP1L055SN
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.01
0.1
1
10
Drain Current : ID [A]
100
Fig.9 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10
Ta=125°C
Ta=75°C
1 Ta=25°C
Ta=-25°C
0.1
0.01
0.0
1000
100
0.5 1.0
Source-Drain Voltage : VSD [V]
1.5
Fig.11 Switching Characteristics
tf
td(off)
Ta=25°C
VDD≒30V
VGS=10V
RG=10W
Pulsed
td(on)
10
tr
1
0.01
0.1 1
Drain Current : ID [A]
10
Fig.8 Typical Transfer Characteristics
100
VDS=10V
pulsed
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.0
0.5 1.0 1.5 2.0 2.5 3.0
Gate-Source Voltage : VGS [V]
3.5
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
150
Ta=25°C
pulsed
ID=5.5A
ID=2.75A
100
50
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.12 Dynamic Input Characteristics
10
Ta=25°C
VDD=30V
ID=5.5A
8 Pulsed
6
4
2
0
0 2 4 6 8 10 12 14 16
Total Gate Charge : Qg [nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.08 - Rev.A
4페이지 Notes
Notice
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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RP1L055SN | 4V Drive Nch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |