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부품번호 | IRL3716PbF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
PD - 95448
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Active Oring
l Lead-Free
VDSS
20V
IRL3716PbF
IRL3716SPbF
IRL3716LPbF
HEXFET® Power MOSFET
RDS(on) max
4.0mΩ
ID
180A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3716
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
D2Pak
IRL3716S
Max.
20
± 20
180
130
720
210
100
1.4
-55 to + 175
TO-262
IRL3716L
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
0.72
–––
62
40
Units
°C/W
Notes through are on page 11
www.irf.com
1
6/22/04
IRL3716/3716S/3716LPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
16 ID = 72A
12
8
4
VDS = 16V
100
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
0
0 30 60 90 120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
150
1000
TJ = 175 ° C
100
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10 TJ = 25 ° C
1
0.1
0.2
V GS= 0 V
0.8 1.4 2.0
V SD,Source-to-Drain Voltage (V)
2.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100 100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
VDS , Drain-toSource Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRL3716/3716S/3716LPbF
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
- +
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
www.irf.com
Fig 14. For N-Channel HEXFET® Power MOSFETs
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ IRL3716PbF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
IRL3716PbF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |