Datasheet.kr   

FDP120AN15A0 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDP120AN15A0은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FDP120AN15A0 자료 제공

부품번호 FDP120AN15A0 기능
기능 N-Channel PowerTrench MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FDP120AN15A0 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 11 페이지수

미리보기를 사용할 수 없습니다

FDP120AN15A0 데이터시트, 핀배열, 회로
September 2002
FDP120AN15A0 / FDD120AN15A0
N-Channel PowerTrench® MOSFET
150V, 14A, 120m
Features
• rDS(ON) = 101m(Typ.), VGS = 10V, ID = 4A
• Qg(tot) = 11.2nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82845
Applications
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 52oC/W
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-220
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-220 (Note 2)
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
150
±20
14
9.7
2.8
Figure 4
122
65
0.43
-55 to 175
2.31
100
62
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B




FDP120AN15A0 pdf, 반도체, 판매, 대치품
Typical Characteristics TC = 25°C unless otherwise noted
100
10µs
100µs
10
1ms
OPERATION IN THIS
1 AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
10ms
DC
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
Figure 5. Forward Bias Safe Operating Area
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
tAV, TIME IN AVALANCHE (ms)
1
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 VDD = 15V
20
15
10
5
0
3
TJ = 25oC
TJ = 175oC
TJ = -55oC
456
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
7
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 TC = 25oC
20
VGS = 10V
15
VGS = 7V
VGS = 6V
10
5
VGS = 5V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
140
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
130
VGS = 6V
120
110
VGS = 10V
100
90
0
3 6 9 12
ID, DRAIN CURRENT (A)
15
Figure 9. Drain to Source On Resistance vs Drain
Current
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 4A
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B

4페이지










FDP120AN15A0 전자부품, 판매, 대치품
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an
application.
Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
125
100
75
PDM
=
-(--T----J---M------–-----T---A-----)
Rθ JA
(EQ. 1)
50
RθJA = 33.32+ 23.84/(0.268+Area) EQ.2
RθJA = 33.32+ 154/(1.73+Area) EQ.3
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of PDM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
Rθ J A
=
33.32
+ -------------2---3---.-8---4-------------
(0.268 + Area)
(EQ. 2)
Area in Inches Squared
Rθ J A
=
33.32
+ -------------1---5---4--------------
(1.73 + Area)
(EQ. 3)
Area in Centimeters Squared
25
0.01
(0.0645)
0.1
(0.645)
1
(6.45)
10
(64.5)
AREA, TOP COPPER AREA in2 (cm2)
Figure 21. Thermal Resistance vs Mounting
Pad Area
©2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B

7페이지


구       성 총 11 페이지수
다운로드[ FDP120AN15A0.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FDP120AN15A0

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵