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PDF FDU8880 Data sheet ( Hoja de datos )
| Número de pieza | FDU8880 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2008
FDU8880
N-Channel PowerTrench® MOSFET
30V, 58A, 10mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
tm
Features
• rDS(ON) = 10mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 13mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
D
GDS
I-PAK
(TO-251AA)
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
30
±20
58
51
13
Figure 4
53
55
0.37
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-251
Thermal Resistance Junction to Ambient TO-251
Thermal Resistance Junction to Ambient TO-251, 1in2 copper pad area
2.73
100
52
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDU8880
Device
FDU8880
Package
TO-251AA
Reel Size
Tube
Tape Width
N/A
Quantity
75 units
©2008 Fairchild Semiconductor Corporation
FDU8880 Rev. B3
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.10
VGS = VDS, ID = 250µA
ID = 250µA
1.0 1.05
0.8 1.00
0.6 0.95
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2000
1000
CISS = CGS + CGD
CRSS = CGD
COSS ≅ CDS + CGD
10
VDD = 15V
8
6
VGS = 0V, f = 1MHz
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 35A
ID = 1A
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2008 Fairchild Semiconductor Corporation
FDU8880 Rev. B3
5 Page 
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
F-PFS™
FRFET®
Power-SPM™
PowerTrench®
tm
CorePOWER™
CROSSVOLT™
CTL™
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Programmable Active Droop™
QFET®
QS™
TinyBoost™
TinyBuck™
TinyLogic®
Current Transfer Logic™
EcoSPARK®
GTO™
IntelliMAX™
Quiet Series™
RapidConfigure™
TINYOPTO™
TinyPower™
EfficentMax™
ISOPLANAR™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
™
®
Fairchild®
Fairchild Semiconductor®
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
UniFET™
VCX™
VisualMax™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDU8880 Rev. B3
11 Page | ||
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| PDF Descargar | [ Datasheet FDU8880.PDF ] | |
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