|
|
|
부품번호 | FDU6030BL 기능 |
|
|
기능 | 30V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
July 2001
FDD6030BL/FDU6030BL
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor drives
Features
• 42 A, 30 V
RDS(ON) = 16 mΩ @ VGS = 10 V
RDS(ON) = 22 mΩ @ VGS = 4.5 V
• Low gate charge (22 nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
42
10
100
50
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6030BL
FDD6030BL
D-PAK (TO-252)
FDU6030BL
FDU6030BL
I-PAK (TO-251)
Reel Size
13’’
Tube
3.0
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2001 Fairchild Semiconductor Corporation
FDD6030BL/FDU6030BL Rev C(W)
Typical Characteristics
80
VGS = 10V
6.0V 5.0V
60
4.5V
40
4.0V
3.5V
20 3.0V
0
0 1234 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2
1.8
ID = 10A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature
60
VDS = 5V
50
T A =-55oC
25oC
125oC
40
30
20
10
0
1 234 5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
2.2
VGS = 3.5V
2
1.8
4.0V
1.6 4.5V
5.0V
1.4
6.0V
1.2
10V
1
0.8
0
20 40 60
ID, DRAIN CURRENT (A)
80
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.06
0.05
ID = 5A
0.04
0.03
TA = 125oC
0.02
0.01
TA = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
10
1
0.1
0.01
VGS = 0V
T A= 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6030BL/FDU6030BL Rev. C(W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FDU6030BL.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDU6030BL | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |