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FDS7296N3 데이터시트 PDF




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부품번호 FDS7296N3 기능
기능 30V N-Channel PowerTrench MOSFET
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FDS7296N3 데이터시트, 핀배열, 회로
September 2004
FDS7296N3
30V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET in the thermally enhanced
SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters.
Providing a balance of low RDS(ON) and Qg it is ideal for
synchronous rectifier applications in both isolated and
non-isolated topologies. It is also well suited for high
and low side switch applications in Point of Load
converters.
Applications
Secondary side Synchronous rectifier
Synchronous Buck VRM and POL Converters
Features
15 A, 30 V
RDS(ON) = 8 m@ VGS = 10 V
RDS(ON) = 11 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
Optimized for low Qgd to enable fast switching and
reduced CdV/dt gate coupling.
SO-8 FLMP for enhanced thermal performance in an
industry-standard package outline.
NDCDNCDNCDNC
D
FBLMotPtoSmOl-e8ss
SO-8
Pin 1SO-8
SS SS SSGG
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7296N3
FDS7296N3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±20
15
60
3.0
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7296N3 Rev C(W)




FDS7296N3 pdf, 반도체, 판매, 대치품
Typical Characteristics
60
VGS =10V
50
6.0V
40
4.0V
4.5V
3.5V
30
20
3.0V
10
0
0 0.25 0.5 0.75 1 1.25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
2
1.8 VGS = 3.5V
1.6
1.4 4.0V
4.5V
1.2 5.0V
6.0V
1 10V
0.8
0
10 20 30 40 50 60
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 15A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
0.022
0.018
ID = 7.5A
0.014
TA = 125oC
0.01
TA = 25oC
0.006
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
VDS = 5V
50
40
30
20
TA =125oC
-55oC
10
0
1.5
25oC
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
TA = 125oC
25oC
0.01
0.001
-55oC
0.0001
4 0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7296N3 Rev C(W)

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FDS7296N3 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ISOPLANAR™
Power247™
Stealth™
ActiveArray™ FASTr™
LittleFET™
PowerEdge™
SuperFET™
Bottomless™ FPS™
MICROCOUPLER™ PowerSaver™
SuperSOT™-3
CoolFET™
FRFET™
MicroFET™
PowerTrench
SuperSOT™-6
CROSSVOLTGlobalOptoisolator™ MicroPak™
QFET
SuperSOT™-8
DOME™
GTO™
MICROWIRE™
QS™
SyncFET™
EcoSPARK™ HiSeC™
MSX™
QT Optoelectronics™ TinyLogic
E2CMOS™
I2C™
MSXPro™
Quiet Series™
TINYOPTO™
EnSigna™
i-Lo
OCX™
RapidConfigure™
TruTranslation™
FACT™
ImpliedDisconnect™ OCXPro™
FACT Quiet Series™
OPTOLOGIC
RapidConnect™
µSerDes™
UHC™
UltraFET
Across the board. Around the world.™ OPTOPLANAR™
The Power Franchise
PACMAN™
Programmable Active Droop™
POP™
SILENT SWITCHERVCX™
SMART START™
SPM™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13

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관련 데이터시트

부품번호상세설명 및 기능제조사
FDS7296N3

30V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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