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MTB55N06Z 데이터시트 PDF




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부품번호 MTB55N06Z 기능
기능 Power MOSFET ( Transistor )
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MTB55N06Z 데이터시트, 핀배열, 회로
MTB55N06Z
Preferred Device
Power MOSFET
55 Amps, 60 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche mode and switch efficiently. This high energy device also
offers a draintosource diode with fast recovery time. Designed for
high voltage, high speed switching applications in power supplies,
PWM motor controls and other inductive loads, the avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated Temperature
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Low Stored Gate Charge for Efficient Switching
Internal SourcetoDrain Diode Designed to Replace External Zener
Transient SuppressorAbsorbs High Energy in the Avalanche Mode
ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
VDSS
60
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
60
GatetoSource Voltage
Continuous
NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Drain Current
Continuous @ TC = 25°C
Continuous @ TC = 100°C
Single Pulse (tp 10 μs)
ID 55
ID 35.5
IDM 165
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD 113
0.91
2.5
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VDS = 60 Vdc,
VGS = 10 Vdc, Peak IL = 55 Apk,
L = 0.3 mH, RG = 25 Ω)
EAS
454 mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (Note 1.)
RθJC
RθJC
RθJA
°C/W
1.1
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
55 AMPERES
60 VOLTS
RDS(on) = 18 mΩ
NChannel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB55N06Z
YWW
12
Gate Drain
3
Source
MTB55N06Z
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB55N06Z
MTB55N06ZT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MTB55N06Z/D




MTB55N06Z pdf, 반도체, 판매, 대치품
MTB55N06Z
4000
VDS = 0 V VGS = 0 V
3200 Ciss
TJ = 25°C
12
10
QT
48
40
8.0
2400
Crss
1600
800
6.0
Ciss
4.0
Coss
2.0
Crss
00
−10 −5.0 0 5.0 10 15 20 25 0
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
VGS 32
Q1 Q2
24
16
TJ = 25°C
ID = 30 A
8.0
Q3 VDS
0
4.0 8.0 12 16 20 24 28 32 36 40
QG, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
1000
TJ = 25°C
ID = 30 A
VDD = 30 V
VGS = 10 V
100
tr
tf
td(off)
td(on)
10
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
30
TJ = 25°C
VGS = 0 V
20
10
0
0.5 0.54 0.58 0.62 0.66 0.70 0.74 0.78 0.82 0.86 0.90 0.94
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
100 ms
10 ms
10
1.0 ms
10 ms
dc
1.0
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LMIT
1.0 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
500
ID = 30 A
400
300
200
100
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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