|
|
PDF MTP52N06V Data sheet ( Hoja de datos )
| Número de pieza | MTP52N06V | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTP52N06V (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
MTP52N06V
Preferred Device
Power MOSFET
52 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 25
52
41
182
188
1.25
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 52 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
EAS
RθJC
RθJA
TL
406
0.8
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
52 AMPERES
60 VOLTS
RDS(on) = 22 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4 Drain
12
3
TO−220AB
CASE 221A
STYLE 5
MTP52N06V
LLYWW
1
Gate
3
Source
MTP52N06V
LL
Y
WW
2
Drain
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP52N06V
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
1
Publication Order Number:
MTP52N06V/D
1 page  
MTP52N06V
12 36
QT 33
10 30
VGS 27
8
Q1
Q2
24
21
6 18
15
4 12
ID = 52 A 9
2 TJ = 25°C 6
Q3
0
VDS
3
0
0 20 40 60 80 100 120 140
QT, TOTAL CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 30 V
ID = 52 A
VGS = 10 V
TJ = 25°C
100
tr
tf
td(off)
10 td(on)
1
1 10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
55
50
VGS = 0 V
TJ = 25°C
45
40
35
30
25
20
15
10
5
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
100
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MTP52N06V.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM |  Motorola Semiconductors |
| MTP52N06V | Power MOSFET ( Transistor ) | ON Semiconductor |
| MTP52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |