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PDF MTP6P20E Data sheet ( Hoja de datos )
| Número de pieza | MTP6P20E | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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MTP6P20E
Preferred Device
Power MOSFET
6 Amps, 200 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
200
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
200
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Drain Current − Continuous
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 μs)
ID
ID
IDM
6.0
3.9
21
Total Power Dissipation
Derate above 25°C
PD 75
0.6
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
EAS
RθJC
RθJA
TL
180
1.67
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
6 AMPERES
200 VOLTS
RDS(on) = 1 Ω
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4 Drain
TO−220AB
CASE 221A
STYLE 5
MTP6P20E
LLYWW
12
3
1
Gate
3
Source
2
Drain
MTP6P20E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP6P20E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MTP6P20E/D
1 page  
MTP6P20E
12
10
8 Q1
QT
Q2
VGS
160 1000
VDD = 100 V
ID = 6.0 A
120
VGS = 10 V
TJ = 25°C
100
6 80
4
ID = 6.0 A
TJ = 25°C
40
2
Q3
0
VDS 0
0 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
tr
td(off)
10 tf
td(on)
1
1 10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
6
VGS = 0 V
5 TJ = 25°C
4
3
2
1
0
0.5 1.0 1.5 2.0 2.5 3.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
100
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
5
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| PDF Descargar | [ Datasheet MTP6P20E.PDF ] | |
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