MTY20N50E Datasheet PDF - ON Semiconductor
| Part Number | MTY20N50E | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
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MTY20N50E
Preferred Device
Power MOSFET
20 Amps, 500 Volts
N−Channel TO−264
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. Designed for high voltage, high speed switching applications
in power supplies, converters and PWM motor controls, these devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
500
500
± 20
± 40
20
13.9
60
250
2.0
Operating and Storage Temperature Range
TJ, Tstg
−55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RθJC
RθJA
TL
2000
0.50
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
http://onsemi.com
20 AMPERES
500 VOLTS
RDS(on) = 260 mΩ
N−Channel
D
G
S
12 3
TO−264
CASE 340G
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
MTY20N50E
LLYWW
1
Gate
3
Source
2
Drain
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTY20N50E
TO−264
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTY20N50E/D
|
| |
 
MTY20N50E
10
8
Q1
6
QT
Q2
VGS
500
400
300
4 200
ID = 20 A
TJ = 25°C
2 100
Q3 VDS
00
0 10 20 30 40 50 60 70 80 90 100
QT, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Gate Charge
1000
VDD = 250 V
ID = 20 A
VGS = 10 V
TJ = 25°C
100
td(off)
tr
tf
td(on)
10
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
20
VGS = 0 V
16 TJ = 25°C
12
8
4
0
0.50 0.54 0.58 0.62 0.66 0.70 0.74 0.78 0.82 0.86 0.90 0.94
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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