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BAS116TT1G PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS116TT1G
기능 Switching Diode
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BAS116TT1G 데이터시트, 핀배열, 회로
BAS116TT1G
Switching Diode
Features
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
VR
IF
IFM(surge)
75
200
500
V
mA
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
JunctiontoAmbient (Note 1)
PD
RqJA
225 mW
1.8 mW/°C
555 °C/W
Total Device Dissipation,
FR4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
JunctiontoAmbient (Note 2)
PD
RqJA
360 mW
2.9 mW/°C
345 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3
CATHODE
1
ANODE
3
12
AE
M
G
MARKING
DIAGRAM
CASE 463
SOT416
STYLE 2
AE MG
G
1
= Specific Device Code
= Date Code
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
BAS116TT1G SOT416 3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 1
1
Publication Order Number:
BAS116TT1/D






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링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BAS116TT1G

Switching Diode

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ON Semiconductor

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