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PDF BAS116TT1G Data sheet ( Hoja de datos )
| Número de pieza | BAS116TT1G | |
| Descripción | Switching Diode | |
| Fabricantes | ON Semiconductor | |
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BAS116TT1G
Switching Diode
Features
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
VR
IF
IFM(surge)
75
200
500
V
mA
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
PD
RqJA
225 mW
1.8 mW/°C
555 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
PD
RqJA
360 mW
2.9 mW/°C
345 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3
CATHODE
1
ANODE
3
12
AE
M
G
MARKING
DIAGRAM
CASE 463
SOT−416
STYLE 2
AE MG
G
1
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
BAS116TT1G SOT−416 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 1
1
Publication Order Number:
BAS116TT1/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAS116TT1G.PDF ] | |
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