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부품번호 | MTB9N25E 기능 |
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기능 | High Energy Power FET | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 12 페이지수
MTB9N25E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET
D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon
Gate
The D2PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower RDS(on) capabilities. This advanced TMOS
E−FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
RDS(on) = 0.45 W
D2PAK
CASE 418B−02
Style 2
D
®G
S
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
MTB9N25E/D
MTB9N25E
TYPICAL ELECTRICAL CHARACTERISTICS
18
TJ = 25°C
15
12
9
6
VGS = 10 V
9V
8V
7V
6V
18
VDS ≥ 10 V
15
12
9
6
TJ = −55°C
25°C
100°C
3 5V
0
0 2 4 6 8 10 12
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
3
0
234567
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.2
VGS = 10 V
1.0
0.8
TJ = 100°C
0.6
25°C
0.4
0.2 − 55°C
0
0 3 6 9 12 15 18
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.6
TJ = 25°C
0.5
VGS = 10 V
0.4
15 V
0.3
0 3 6 9 12 15
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 4.5 A
2.0
1.5
1.0
0.5
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
100
10
1
TJ = 125°C
100°C
25°C
0.1
0 50 100 150 200 2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
4
4페이지 MTB9N25E
shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MTB9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS | Motorola Semiconductors |
MTB9N25E | High Energy Power FET | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |