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MTB9N25E 데이터시트 PDF




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부품번호 MTB9N25E 기능
기능 High Energy Power FET
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MTB9N25E 데이터시트, 핀배열, 회로
MTB9N25E
Designer’sData Sheet
TMOS E−FET.
High Energy Power FET
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
The D2PAK package has the capability of housing a larger die than
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower RDS(on) capabilities. This advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
RDS(on) = 0.45 W
D2PAK
CASE 418B02
Style 2
D
®G
S
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MTB9N25E/D




MTB9N25E pdf, 반도체, 판매, 대치품
MTB9N25E
TYPICAL ELECTRICAL CHARACTERISTICS
18
TJ = 25°C
15
12
9
6
VGS = 10 V
9V
8V
7V
6V
18
VDS 10 V
15
12
9
6
TJ = −55°C
25°C
100°C
3 5V
0
0 2 4 6 8 10 12
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
3
0
234567
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.2
VGS = 10 V
1.0
0.8
TJ = 100°C
0.6
25°C
0.4
0.2 − 55°C
0
0 3 6 9 12 15 18
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
0.6
TJ = 25°C
0.5
VGS = 10 V
0.4
15 V
0.3
0 3 6 9 12 15
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 4.5 A
2.0
1.5
1.0
0.5
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
1000
VGS = 0 V
100
10
1
TJ = 125°C
100°C
25°C
0.1
0 50 100 150 200 2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
http://onsemi.com
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MTB9N25E 전자부품, 판매, 대치품
MTB9N25E
shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
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관련 데이터시트

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MTB9N25E

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