Datasheet.kr   

NCV8851-1 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NCV8851-1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 NCV8851-1 자료 제공

부품번호 NCV8851-1 기능
기능 Automotive Grade Synchronous Buck Controller
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


NCV8851-1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 18 페이지수

미리보기를 사용할 수 없습니다

NCV8851-1 데이터시트, 핀배열, 회로
NCV8851-1
Automotive Grade
Synchronous Buck
Controller
The NCV8851−1 is an adjustable output, synchronous buck
controller, which drives dual N−channel MOSFETs, ideal for high
power applications. Average current mode control is employed for
very fast transient response and tight regulation over wide input
voltage and output load ranges. The IC incorporates an internal fixed
6.0 V low−dropout linear regulator (LDO), which supplies charge to
the switch mode power supply’s (SMPS) bottom gate driver, limiting
the power lost to excess gate drive. The IC is designed for operation
over a wide input voltage range (4.5 V to 40 V) and is capable of 10 to
1 voltage conversion at 500 kHz.
Additional controller features include undervoltage lockout,
internal soft−start, low quiescent current sleep mode, programmable
frequency, SYNC function, average current limiting, cycle−by−cycle
overcurrent protection and thermal shutdown.
Features
Average Current Mode Control
0.8 V ±2% Reference Voltage
Wide Input Voltage Range of 4.5 V to 40 V
Operates through Load Dump Conditions
6.0 V Low−dropout Linear Regulator (LDO)
Input UVLO (Undervoltage Lockout)
Internal Soft−start
1.0 mA Maximum Quiescent Current in Sleep Mode
Adaptive Non−overlap Circuitry
180 ns Minimum High−side Gate Off−time
Programmable Fixed Frequency – 170 kHz to 500 kHz
External Clock Synchronization up to 600 kHz
Average Current Limiting (ACL)
Cycle−by−Cycle Overcurrent Protection (OCP)
Thermal Shutdown (TSD)
This is a Pb−Free Device
Applications
Automotive Systems Requiring High Current
Pre−regulated Supply for Low−voltage SMPSs and LDOs
www.onsemi.com
TSSOP−20
SUFFIX DB
CASE 948E
MARKING DIAGRAM
V88
51−1
ALYWG
G
V8851−1 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NCV8851−1DBR2G TSSOP−20
(Pb−Free)
Shipping
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 2
1
Publication Order Number:
NCV8851−1/D




NCV8851-1 pdf, 반도체, 판매, 대치품
NCV8851−1
ATTRIBUTES
Characteristic
ESD Capability
Human Body Model (Boost, VIN_CS)
Human Body Model (All Others)
Machine Model
Charge Device Model
Package Thermal Resistance
Junction–to–Ambient, RqJA (Note 1)
Junction–to–Ambient, RqJA (Note 2)
1. 50 mm2, 1.0 oz copper on FR4 board.
2. 500 mm2, 1.0 oz copper on FR4 board.
ELECTRICAL CHARACTERISTICS
(−40°C < TJ < 150°C, 4.5 V < VIN < 40 V, 4.5 V < BST < 46 V, ROSC = 51.1 kW, unless otherwise specified)
Characteristic
Conditions
Min Typ
GENERAL
Quiescent Current
(IVIN + IVIN_CS + IBST)
VIN = 13.2 V, EN = 0 V, Sleep Mode
−40°C < TA < 125°C
VIN = 13.2 V, VFB = 1 V
EN = 5 V, No Switching
−−
− 2.0
VIN = 13.2 V, VFB = 0 V
EN = 5 V, Switching
− 3.2
LDO Current
VIN = 13.2 V, VFB = 0 V, EN = 5 V
Switching, 3.3 nF on GH and GL
− 10
Thermal Shutdown
Guaranteed by Design
150 180
Thermal Shutdown Hysteresis
Guaranteed by Design
− 10
Undervoltage Lockout (VIN_IC)
Undervoltage Lockout Hysteresis
VIN_IC increasing
4.1 4.3
50 125
SWITCHING REGULATOR
Reference Voltage
0.784
0.8
Minimum GH Off Time
110 180
Minimum GH Pulse Width
Static Operating
− 140
OSCILLATOR
Switching Frequency
Ramp Voltage Amplitude
ROSC = 51.1 kW
ROSC = 23.2 kW
ROSC = 16.2 kW
153 170
306 360
425 500
0.9 1.1
VOLTAGE ERROR AMPLIFIER
DC Gain
Guaranteed by Design
70 73
Gain−Bandwidth Product
Guaranteed by Design
8.0 10
Charge Currents
FB Bias Current
Source, VCOMP = 0 V
Sink, VCOMP = 1.75 V
Guaranteed by Design
24
1.3 3
− 0.1
CURRENT SENSE AMPLIFIER
Common−Mode Range
0−
Amplifier Gain
0 (CSP−CSN) 100 mV
0 V CSN 10.0 V
−1
Value
1.0 kV
1.5 kV
200 V
1.0 kV
156°C/W
108°C/W
Max
1
3.0
5.0
20
210
20
4.5
200
0.816
250
200
187
414
575
1.3
1.0
10.0
Unit
mA
mA
mA
mA
°C
°C
V
mV
V
ns
ns
kHz
kHz
kHz
V
dB
MHz
mA
mA
mA
V
V/V
www.onsemi.com
4

4페이지










NCV8851-1 전자부품, 판매, 대치품
NCV8851−1
TYPICAL CHARACTERISTICS
(TA = +25°C, VIN = 13.2 V, ROSC = 51.1 kW, unless otherwise noted)
102%
170 kHz 360 kHz 500 kHz
101%
100%
99%
98%
97%
96%
−50
0 50 100
Ambient Temperature (°C)
150
Figure 12. Oscillator Frequency
vs. Temperature
70 GH to GL GL to GH
65
60
55
50
45
40
35
30
25
20
−50
0 50 100
Ambient Temperature (°C)
150
Figure 13. Non−Overlap Delay vs.
Temperature
108%
106%
104%
102%
100%
98%
−50
0 50 100
Ambient Temperature (°C)
150
Figure 14. GH Minimum Pulse
Width vs. Temperature
100.50%
100.25%
100.00%
99.75%
99.50%
0.00
5.00
10.00
15.00
LDO Load Current (mA)
20.00
Figure 15. LDO Load Regulation
1000
UNSTABLE
130
120
100 110
STABLE
10
100
90
80
1 70
UNSTABLE
(0.1uF only)
60
0.1
0
5 10 15
LDO Load Current (mA)
50
20 −50
0 50 100
Ambient Temperature (°C)
150
Figure 16. LDO Stability Region
Figure 17. LDO Dropout Voltage vs.
Temperature
100
93%
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Load Current (A)
Figure 18. Efficiency vs. Load
Current 5 V, 170 kHz Demo Board
www.onsemi.com
7

7페이지


구       성 총 18 페이지수
다운로드[ NCV8851-1.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NCV8851-1

Automotive Grade Synchronous Buck Controller

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵