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PDF C5988 Data sheet ( Hoja de datos )
| Número de pieza | C5988 | |
| Descripción | Silicon NPN transistor epitaxial type | |
| Fabricantes | PHENITEC SEMICONDUCTOR | |
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C5988
Silicon NPN transistor epitaxial type
C5988
[ Applications ]
High current amplifier
[ Feature ]
Collector current IC= 6A
Very low collector saturation voltage VCE(sat)= 550mV (Max.) at IC= 6A, IB= 300mA
Exellent gain characteristics specified up to 10 ampers
PNP complementary pair with A5988
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base voltage
VCBO
150
Collector-emitter voltage
VCEO
60
Emitter-base voltage
VEBO
6
Collector current (DC)
IC 6
Collector current (Pulse)
ICP 20
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Unit
V
V
V
A
A
C
C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 150 170
-
V IC= 100uA
Collector-emitter breakdown voltage BVCEO 60
70
-
V IC= 10mA
Emitter-base breakdown voltage
BVEBO 6
8
-
V IE= 100uA
Collector cut-off current
ICBO
-
- 50 nA VCB= 120V
Emitter cut-off current
IEBO
-
- 10 nA VEB= 6V
DC current gain 1
hFE 1 100
-
-
- VCE= 1V, IC= 10mA
DC current gain 2
hFE 2 120 200 300
- VCE= 1V, IC= 2A
DC current gain 3
hFE 3 75
100
-
- VCE= 1V, IC= 5A
DC current gain 4
hFE 4
-
30
-
- VCE= 1V, IC= 10A
Collector-emitter saturation voltage 1 VCE(sat) 1 -
20 50 mV IC= 100mA, IB= 5mA
Collector-emitter saturation voltage 2 VCE(sat) 2 -
80 120 mV IC= 1A, IB= 50mA
Collector-emitter saturation voltage 3 VCE(sat) 3 -
150 220 mV IC= 2A, IB= 100mA
Collector-emitter saturation voltage 4 VCE(sat) 4 -
400 550 mV IC= 6A, IB= 300mA
Base-emitter saturation voltage
VBE(sat) -
1.15 1.3
V IC= 6A, IB= 300mA
Base-emitter on voltage
VBE(on) -
1.05 1.2
V VCE= 1V, IC= 6A
Transition frequency
fT - 150 - MHz VCE= 10V, IE= -100mA
Collector output capacitance
Cob - 50 - pF VCB= 10V, f = 1MHz, IE= 0A
Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.
No. C5988-20070213
PHENITEC SEMICONDUCTOR Corp.
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| Páginas | Total 2 Páginas | |
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