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부품번호 | NTMFS4934N 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
NTMFS4934N
Power MOSFET
30 V, 147 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery, DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C
TA = 100°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 37 Apk, L = 0.3 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
IDmax
TTSJT,G
IS
dV/dt
EAS
TL
30 V
±20 V
29.1 A
18.4
2.72 W
47.5 A
30.0
7.23 W
17.1 A
10.8
0.93 W
147
93
69.44
A
W
442
100
−55 to
+150
68
6
205
A
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.0 mW @ 10 V
3.0 mW @ 4.5 V
ID MAX
147 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4934N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4934NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4934NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 4
1
Publication Order Number:
NTMFS4934N/D
NTMFS4934N
TYPICAL CHARACTERISTICS
180
160
140
120
100
80
60
40
20
0
0
3.6 V to 10 V
TJ = 25°C
VGS = 3.4 V
3.2 V
3.0 V
2.8 V
2.2 V
2.6 V
2.4 V
1234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
200
180 VDS = 10 V
160
140
120
100
80 TJ = 125°C
60 TJ = 25°C
40
20 TJ = −55°C
0
1 1.5 2 2.5 3 3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
0.0028
0.0026
0.0024
0.0022
ID = 30 A
TJ = 25°C
0.0026
TJ = 25°C
0.0024
0.0022
0.0020
VGS = 4.5 V
0.0020
0.0018
0.0018
0.0016
0.0016
0.0014
VGS = 10 V
0.0014
3
4
5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.0012
20 40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6 ID = 30 A
1.5 VGS = 10 V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50 −25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
VGS = 0 V
10000
TJ = 150°C
1000
TJ = 125°C
TJ = 85°C
100
150 5
10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
4페이지 NTMFS4934N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
D
2
D1
2X
0.20 C
A
B 2X
E1
2E
1 2 34
TOP VIEW
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
8X b
0.10 C A B
0.05 c L
e/2
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
c
4X
q
A1
3X
e
DETAIL A
C
SEATING
PLANE
MILLIMETERS
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00
−−− 0.05
b 0.33 0.41 0.51
c 0.23 0.28 0.33
D 5.15 BSC
D1 4.50 4.90 5.10
D2 3.50
−−− 4.22
E 6.15 BSC
E1 5.50 5.80 6.10
E2 3.45
−−− 4.30
e 1.27 BSC
G 0.51 0.61 0.71
K 1.20 1.35 1.50
L 0.51 0.61 0.71
L1 0.05 0.17 0.20
M 3.00 3.40 3.80
q 0 _ −−− 12 _
STYLE 1:
PIN 1. SOURCE
SOLDERING FOOTPRINT*
2. SOURCE
3. SOURCE
4. GATE
3X
1.270
4X
0.750
5. DRAIN
4X
1.000
1
E2
PIN 5
(EXPOSED PAD)
4
K
L1 M
0.965
1.330
2X
0.495
3.200
0.29X05
4.530
0.475
G D2
BOTTOM VIEW
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
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7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFS4934N/D
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NTMFS4934N | Power MOSFET ( Transistor ) | ON Semiconductor |
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