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PDF NTMKE4890N Data sheet ( Hoja de datos )
| Número de pieza | NTMKE4890N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMKE4890N
Power MOSFET
30 V, 155 A, Single N−Channel, ICEPAK
Features
• Low Package Inductance
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
• Compatible with MX Footprint and Outline
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Optimized for both Synch FET
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
32
25.5
2.8
V
V
A
W
Continuous Drain
C(Nuortreen2t)RqJ−PCB
Power Dissipation
RqJ−PCB (Note 2)
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 70°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
ID 155 A
86
PD 65 W
ID 192 A
154
PD 100 W
IDM
IDmax
TJ,
Tstg
244
50
−40 to
150
A
A
°C
Source Current (Body Diode) (Note 1)
Drain to Source DV/DT
IS
dV/dt
128 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy EAS 505 mJ
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 58 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 270 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Measured with a TJ of approximately 90°C using 1 oz Cu board.
3. Surfacemounted on FR4 board using 1 sq−in pad, 2 oz Cu.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
1.8 mW @ 10 V
2.5 mW @ 4.5 V
ID MAX
155 A
ÍÍ
MARKING
DIAGRAM
ICEPAK
E PAD
CASE 145AB
E4890
AYWWG
G
E4890= Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
D
G
S
N−CHANNEL MOSFET
ORDERING INFORMATION
Device
Package
Shipping†
NTMKE4890NT1G ICEPAK 1500/Tape & Reel
(Pb−Free)
NTMKE4890NT3G ICEPAK 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 4
1
Publication Order Number:
NTMKE4890N/D
1 page  
100
50% (DUTY CYCLE)
10 20%
10%
5.0%
1 2.0%
1.0%
0.1
0.01
0.000001
SINGLE PULSE
0.00001
0.0001
NTMKE4890N
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
PULSE TIME (s)
Figure 13. Thermal Impedance
1.0
10
100 1000
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMKE4890N.PDF ] | |
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