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PDF NVMFS5C670NL Data sheet ( Hoja de datos )
| Número de pieza | NVMFS5C670NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVMFS5C670NL
Power MOSFET
60 V, 6.1 mW, 71 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS5C670NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreesnt1R, 3qJ)C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ,A3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
71
50
61
31
17
12
3.6
1.8
440
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 68 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 4 A)
EAS 100 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
2.4 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
60 V
RDS(ON) MAX
6.1 mW @ 10 V
8.8 mW @ 4.5 V
ID MAX
71 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
XXXXXX = 5C670L
XXXXXX = (NVMFS5C670NL) or
XXXXXX = 670LWF
XXXXXX = (NVMFS5C670NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 0
1
Publication Order Number:
NVMFS5C670NL/D
1 page  
100
50% Duty Cycle
10 20%
10%
5%
1 2%
1%
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
NVMFS5C670NL
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
1
10 100 1000
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