FGPF15N60UNDF Datasheet PDF - Fairchild Semiconductor
| Part Number | FGPF15N60UNDF | |
| Description | Short Circuit Rated IGBT | |
| Manufacturers | Fairchild Semiconductor | |
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FGPF15N60UNDF
600 V, 15 A
Short Circuit Rated IGBT
Features
• Short Circuit Rated 10us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
September 2013
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
C
GCE
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
600
± 20
30
15
45
15
7.5
42
17
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
1
Typ.
-
-
-
Max.
3.0
4.9
62.5
Unit
V
V
A
A
A
A
A
W
W
oC
oC
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
|
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
4
IC = 7.5A
15A
30A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
200V
12 400V
VCC = 100V
9
20
6
3
Common Emitter
TC = 25oC
0
0 5 10 15 20 25 30 35 40 45 50
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
50
40
30
20
10
5
0
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
10 20 30 40 50
Gate Resistance, RG [Ω]
60
Figure 8. Capacitance Characteristics
3000
1000
Cies
Coes
Cres
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
1 10
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
100
30
10μs
10
100μs
1ms
1
10 ms
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10
DC
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0 10 20 30 40 50 60
Gate Resistance, RG [Ω]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
5
www.fairchildsemi.com
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| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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