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PDF MCH6613 Data sheet ( Hoja de datos )

Número de pieza MCH6613
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! MCH6613 Hoja de datos, Descripción, Manual

Ordering number : EN6920C
MCH6613
Power MOSFET
30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6
http://onsemi.com
Features
The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting
Excellent ON-resistance characteristic
1.5V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
N-channel P-channel
30 --30
±10 ±10
0.35
--0.2
1.4 --0.8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15 MCH6613-TL-E
0 to 0.02
1 23
0.65 0.3
123
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
MCPH6
Ordering & Package Information
Device
Package
MCH6613-TL-E
MCPH6
SC-88, SC-70-6, SOT-363
Shipping
3,000
pcs./reel
memo
Pb-Free
Packing Type : TL
Marking
TL
Electrical Connection
65
4
FM
12
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71013 TKIM TC-00002962/71112 TKIM/52506PE MSIM TB-00002278/52101 TSIM TA-324 No.6920-1/8

1 page




MCH6613 pdf
MCH6613
RDS(on) -- Ta
[Nch]
7
6
5
4
3
I
DI=D4=08m0Am,AV,
GS=2.5V
V GS=4.0V
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00035
| yfs | -- ID
[Nch]
1.0
7 VDS=10V
5
25°C
3
2 Ta= --25°C
75°C
0.1
7
5
3
2
0.01
0.01
1.0
7
5
3
2
23
5 7 0.1
23
5
Drain Current, ID -- A
IT00036
IS -- VSD
[Nch]
VGS=0V
0.1
7
5
3
2
0.01
0.5
1000
7
5
3
2
100
7
5
3
2
0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT00037
[Nch]
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
10
0.01
23
5 7 0.1
Drain Current, ID -- A
2
IT00038
RDS(on) -- Ta
[Pch]
18
16
14
12
10
8
I D=I D--=30--m50Am, VA,GVS=G-S-2=.5--V4.0V
6
4
2
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00083
| yfs | -- ID
[Pch]
1.0
7 VDS= --10V
5
3
2
0.1 Ta= --25°C
7 75°C
5
25°C
3
2
0.01
--0.01
5
3
2
23
5 7 --0.1
Drain Current, ID -- A
IS -- VSD
23
IT00084
[Pch]
VGS=0V
--0.1
7
5
3
2
--0.01
--0.5
1000
7
5
3
2
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT00085
[Pch]
VDD= --15V
VGS= --4V
td(off)
tf
100
7
5 tr
3 td(on)
2
10
--0.01
23
5
Drain Current, ID -- A
7 --0.1
IT00086
No.6920-5/8

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