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부품번호 | NTH4302 기능 |
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기능 | HD3e Quad N-Channel | ||
제조업체 | ON Semiconductor | ||
로고 | |||
NTH4302
Product Preview
HD3e Quad N−Channel
The NTH4302 is the first integrated Quad FET in a single package.
It is the integration of 4 planar TMOS devices. It uses the latest HD3e
TMOS technology from ON Semiconductor, with very high cell
density and improved switching capability
The NTH4302 is a 16-pin leadless device packaged in the new
PInPAKt from ON Semiconductor. The PInPAK is a new flexible
power package that uses the MAP process. The NTH4302 uses the
same MOSFET as the NTD60N02R. However, with the PInPAK
package, various other pairs of MOSFETs can be used to create
additional custom applications.
Features
• Ultra Low RDS(on) Provides Higher Efficiency
• Very Fast Switching due to Planar Technology and Leadless Package
• 200% Footprint Reduction Compared to Similar DPAK Solution for
the Same Power
• Up to 80 Amp per FET
• Very Low Vf (0.8 mV) Ideal for Synchronous Rectification
• Specifically Designed for DC-DC Buck Converter in VRM9.1
Application (80 Amp Per Phase, 500 khz)
Application
• DC-DC Converter
• Motherboard/Server Buck Converter
• Telecom/Industrial Power Supply
• Automotive Motor Drive
• H-Bridge
Application Note AND8086/D, “Board Mounting Notes for Quad Flat-Pack
No-Lead Package (QFN)”, is available on our web site www.onsemi.com.
http://onsemi.com
QUAD TMOS POWER MOSFET
40 AMPERES
24 VOLTS
RDS(on) = 7.5 mW
Ciss = 2050 pF
RqJC = 1.3 5C/W
MARKING
DIAGRAM
TBD
CASE TBD
PInPAK
xx = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
PINOUT DIAGRAM
TBD
ORDERING INFORMATION
Device
Package
NTH4301
ONiPAK
Shipping
TBD
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 0
1
Publication Order Number:
NTH4301/D
NTH4302
120
100
80
60
40
20
0
0
VGS = 10 V
VGS = 8.0 V
VGS = 6.0 V
VGS = 5.5 V
VGS = 5.0 V
VGS = 4.5 V
VGS = 4.0 V
VGS = 3.5 V
VGS = 3.0 V
VGS = 2.5 V
2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2. On-Region Characteristics
120
VDS w 10 V
100
80
60
40
TJ = 25°C
20
TJ = 150°C
0
012
TJ = -55°C
3
5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
6
0.028
VGS = 10 V
0.024
0.028
VGS = 4.5 V
0.024
0.02
0.016
0.012
0.008
TJ = 150°C
TJ = 125°C
TJ = -55°C
TJ = 25°C
0.02
0.016
0.012
0.008
TJ = 150°C
TJ = 125°C
TJ = 25°C
TJ = -55°C
0.004
0.004
10 20 30 40 50 60 70 80 90 100 110 120
10 20 30 40 50 60 70 80 90 100 110 120
ID, DRAIN CURRENT (A)
Figure 4. On-Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (A)
Figure 5. On-Resistance versus Drain Current
and Temperature
1.8
ID = 30 A
1.6 VGS = 4.5 V and 10 V
1.4
1.2
10000
1000
TJ = 150°C
TJ = 125°C
1.0 100
TJ = 100°C
0.8
0.6
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On-Resistance Variation with
Temperature
150
10
0 5 10 15 20 25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Drain-to-Source Leakage Current
versus Voltage
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NTH4302 | HD3e Quad N-Channel | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |