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PDF NTP4813NL Data sheet ( Hoja de datos )
| Número de pieza | NTP4813NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTP4813NL
Power MOSFET
30 V, 51 A, Single N−Channel, TO−220AB
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Low RG
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Motor Control
• High Current, High Side Switching
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±20
12.8
9.9
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
3.75 W
10.2 A
7.9
2.40 W
51 A
39.5
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
60 W
154 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxPkg
TJ,
TSTG
IS
dV/dt
95
−55 to
+175
50
6
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 18 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
48.6 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
13.1 mW @ 10 V
22 mW @ 4.5 V
ID MAX
51 A
D
G
S
N−CHANNEL MOSFET
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
NTP4813NLG
AYWW
1
Gate
3
Source
2
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 1
1
Publication Order Number:
NTP4813NL/D
1 page  
NTP4813NL
TYPICAL PERFORMANCE CURVES
1000
900
800
700
600
500
400
300
200
100
0
0
TJ = 25°C
Ciss
Coss
Crss
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
25
15
13.5
12
10.5
QT
9
7.5
6
4.5
3
1.5
0
0
Q1
12
Q2
ID = 30 A
VDD = 15 V
VGS = 11.5 V
TJ = 25°C
3 4 5 6 7 8 9 10 11 12 13 14 15 16
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
100
tr
td(off)
10
td(on)
tf
1
1
VDD = 15 V
ID = 30 A
VGS = 11.5 V
10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
10 ms
10
1
0.1
100 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 ms
10 ms
dc
1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
45 ID = 18 A
40
35
30
25
20
15
10
5
0
25 50
75 100
125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NTP4813NL.PDF ] | |
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