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Datasheet PJL9801 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJL9801 | 30V P-Channel Enhancement Mode MOSFET PPJL9801
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-5A
Features
RDS(ON) , VGS@-10V, [email protected]<54mΩ RDS(ON) , [email protected], [email protected]<61mΩ RDS(ON) , [email protected], [email protected]<82mΩ Advanced Trench Process Technology High density cell design for ultra low on-resis |  Pan Jit International | mosfet |
PJL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJL9433 | 60V P-Channel Enhancement Mode MOSFET PPJL9433
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-3.2 A
SOP-8
Features
RDS(ON), VGS@-10V,[email protected]<115mΩ RDS(ON), [email protected],[email protected]<160mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free Pan Jit International mosfet | | |
| 2 | PJL9433A | 60V P-Channel Enhancement Mode MOSFET PPJL9433A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-3.2 A
SOP-8
Features
RDS(ON), VGS@-10V,[email protected]<110mΩ RDS(ON), [email protected],[email protected]<130mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free Pan Jit International mosfet | | |
| 3 | PJL9436 | 60V N-Channel Enhancement Mode MOSFET PPJL9436
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
12 A
Features
RDS(ON), VGS@10V,ID@12A<10mΩ High switching speed Improved dv/dt capability Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compo Pan Jit International mosfet | | |
| 4 | PJL9450A | 100V N-Channel Enhancement Mode MOSFET PPJL9450A
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
2.7 A
SOP-8
Features
RDS(ON), VGS@10V,[email protected]<152mΩ RDS(ON), [email protected],[email protected]<158mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with Pan Jit International mosfet | | |
| 5 | PJL9454A | 100V N-Channel Enhancement Mode MOSFET PPJL9454A
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
5A
SOP-8
Features
RDS(ON) , VGS@10V, ID@5A<50mΩ RDS(ON) , [email protected], ID@3A<55mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with EU Pan Jit International mosfet | | |
| 6 | PJL9801 | 30V P-Channel Enhancement Mode MOSFET PPJL9801
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-5A
Features
RDS(ON) , VGS@-10V, [email protected]<54mΩ RDS(ON) , [email protected], [email protected]<61mΩ RDS(ON) , [email protected], [email protected]<82mΩ Advanced Trench Process Technology High density cell design for ultra low on-resis Pan Jit International mosfet | | |
| 7 | PJL9812 | Dual N-Channel Enhancement Mode MOSFET PPJL9812
30V Dual N-Channel Enhancement Mode MOSFET
Voltage
30 V Current
6A
SOP-8
Features
RDS(ON) , VGS@10V, ID@6A<35mΩ RDS(ON) , [email protected], ID@4A<40mΩ RDS(ON) , [email protected], ID@2A<54mΩ Advanced Trench Process Technology ESD Protected 2KV HBM High density cell design Pan Jit International mosfet | |
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