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PDF NCV887200 Data sheet ( Hoja de datos )
| Número de pieza | NCV887200 | |
| Descripción | Automotive Grade Non-Synchronous Boost Controller | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NCV887200
Automotive Grade
Non-Synchronous Boost
Controller
The NCV887200 is an adjustable output non−synchronous boost
controller which drives an external N−channel MOSFET. The device
uses peak current mode control with internal slope compensation. The
IC incorporates an internal regulator that supplies charge to the gate
driver.
Protection features include internally−set soft−start, undervoltage
lockout, cycle−by−cycle current limiting, hiccup−mode short−circuit
protection and thermal shutdown.
Additional features include low quiescent current sleep mode and
externally−synchronizable switching frequency.
Features
• Peak Current Mode Control with Internal Slope Compensation
• 1.2 V ±2% Reference voltage
• Fixed Frequency Operation
• Wide Input Voltage Range of 4.8 V to 40 Vdc, 45 V Load Dump
• Input Undervoltage Lockout (UVLO)
• Extended UVLO Hysteresis Allows Continuous Operation with a
Reverse Polarity Protection Diode
• Internal Soft−Start
• Low Quiescent Current in Sleep Mode
• Cycle−by−Cycle Current Limit Protection
• Hiccup−Mode Overcurrent Protection (OCP)
• Hiccup−Mode Short−Circuit Protection (SCP)
• Thermal Shutdown (TSD)
• This is a Pb−Free Device
www.onsemi.com
8
1
SOIC−8
D SUFFIX
CASE 751
MARKING
DIAGRAM
8
887200
ALYW
G
1
887200 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
PIN CONNECTIONS
EN/SYNC 1
ISNS 2
GND 3
GDRV 4
8 VFB
7 VC
6 VIN
5 VDRV
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NCV887200D1R2G SOIC−8 2500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 7
1
Publication Order Number:
NCV887200/D
1 page  
NCV887200
ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 4.8 V < VIN < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol
Conditions
Min Typ Max Unit
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
VEA Minimum Output Voltage
VEA Sourcing Current
VEA Sinking Current
GATE DRIVER
Vc,min
Isrc,vea
Isnk,vea
VEA output current, Vc = 2.0 V
VEA output current, Vc = 0.7 V
− − 0.3
80 100
−
80 100
−
V
mA
mA
Sourcing Current
Sinking Current
Driving Voltage Dropout
Driving Voltage Source Current
Backdrive Diode Voltage Drop
Driving Voltage
UVLO
Isrc
Isink
Vdrv,do
Idrv
Vd,bd
VDRV
VDRV ≥ 6 V, VDRV − VGDRV = 2 V
VGDRV ≥ 2 V
VIN − VDRV, IvDRV = 25 mA
VIN − VDRV = 1 V
VDRV − VIN, Id,bd = 5 mA
IVDRV = 0.1 − 25 mA
400 575
−
250 375
−
− 0.3 0.6
35 45
−
− − 0.7
8.0 8.4 8.8
mA
mA
V
mA
V
V
Undervoltage Lock−Out,
Threshold Voltage
Undervoltage Lock−Out,
Hysteresis
Vuvlo
Vuvlo,hys
VIN falling
VIN rising
VIN rising
4.6 4.75 4.90
− 5.23 5.45
350 500
−
V
mV
SHORT CIRCUIT PROTECTION
Startup blanking period
Hiccup−mode period
Short circuit threshold voltage
Short circuit delay
THERMAL SHUTDOWN
%tscp,dly
%thcp,dly
%Vscp
tscp
From start of soft−start, Percent of tss
From shutdown to start of soft−start,
Percent of tss
VFB as percent of Vref
From VFB < Vscp to stop switching
100 120 150
70 85 100
60 67 75
− 35 100
%
%
%
ns
Thermal shutdown threshold
Thermal shutdown hysteresis
Thermal shutdown delay
Tsd
Tsd,hys
tsd,dly
TJ rising
TJ falling
From TJ > Tsd to stop switching
160 170 180
10 15 20
− − 100
°C
°C
ns
www.onsemi.com
5
5 Page 
NCV887200
mathematical model of the IC in a boost converter topology.
The model does have limitations and a more accurate SPICE
model should be considered for a more detailed analysis:
• The attenuating effect of large value ceramic capacitors
in parallel with output electrolytic capacitor ESR is not
considered in the equations.
• The CCM Boost control-output transfer function
includes operating efficiency as a correction factor to
improve modeling accuracy under low input voltage
and high output current operating conditions where
operating losses becomes significant.
VIN rL L
Vd VOUT
VC
R2
C2
C1
RESD
VCTRL
R0
OTA
GDRV
Rds(on)
ISNS
VFB
Ri
rCf
COUT
ROUT
R1
GND
Rlow
Figure 12. NCV887200 Boost Converter OTA and Compensation
www.onsemi.com
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet NCV887200.PDF ] | |
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