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PDF SSF3641 Data sheet ( Hoja de datos )

Número de pieza SSF3641
Descripción 30V Dual P-Channel MOSFET
Fabricantes GOOD-ARK 
Logotipo GOOD-ARK Logotipo



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SSF3641
30V Dual P-Channel MOSFET
DESCRIPTION
The SSF3641 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
VDS =- 30V,ID =-5A
RDS(ON) < 64mΩ @ VGS=-4.5V
RDS(ON) < 49mΩ @ VGS=-10V
High Power and current handing capability
Lead free product
Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
PWM applications
Load switch
Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3641
SSF3641
SOP-8
Ø330mm
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
VGS
ID25
ID70
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±12
-5
-4.2
-30
2.0
-55 To 150
Unit
V
V
A
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30 V
www.goodark.com
Page 1 of 6
Rev.1.0

1 page




SSF3641 pdf
Qg Gate Charge (nC)
Figure 11 Gate Charge
SSF3641
30V Dual P-Channel MOSFET
-Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
-Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
www.goodark.com
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Rev.1.0

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