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PDF SSF6808A Data sheet ( Hoja de datos )
| Número de pieza | SSF6808A | |
| Descripción | 68V N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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SSF6808A
68V N-Channel MOSFET
FEATURES
Advanced trench process technology
Ultra low Rdson, typical 5mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =84A
BV=68V
R DS (ON)=8mohm
DESCRIPTION
The SSF6808A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6808A is
assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF6808A Top View (TO-263)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
IDM Pulsed drain current ①
Power dissipation
PD@TC=25ْC
Linear derating factor
VGS Gate-to-Source voltage
dv/dt
Peak diode recovery voltage
EAS
EAR
TJ
TSTG
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
84
76
310
180
1.5
±20
31
400
TBD
–55 to +175
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BVDSS
RDS(on)
VGS(th)
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
68 —
—5
2.0
——
IDSS Drain-to-Source leakage current
——
Max. Units
—V
8 mΩ
4.0 V
2
μA
10
IGSS Gate-to-Source forward leakage
— — 100 nA
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=68V,VGS=0V
VDS=68V,
VGS=0V,TJ=150ْC
VGS=20V
www.goodark.com
Page 1 of 5
Rev.1.1
1 page  
TO-263 MECHANICAL DATA
SSF6808A
68V N-Channel MOSFET
www.goodark.com
Page 5 of 5
Rev.1.1
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSF6808A.PDF ] | |
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