|
|
PDF MBRJ2045CTG Data sheet ( Hoja de datos )
| Número de pieza | MBRJ2045CTG | |
| Descripción | Power Rectifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MBRJ2045CTG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
MBRJ2045CTG
Product Preview
SWITCHMODE
Power Rectifier
Features and Benefits
• Low Forward Voltage
• Low Power Loss / High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• This is a Pb−Free Device
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Rating: Human Body Model = 3B
Machine Model = C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 45 VOLTS
1
2, 4
3
MARKING
DIAGRAM
1 23
TO−220 FULLPAKt
CASE 221AH
CT SUFFIX
AYWW
B2045G
AKA
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. P0
1
Publication Order Number:
MBRJ2045CT/D
1 page  
MBRJ2045CTG
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
1000
900
800
700
600
500
400
300
200
100
0
0
VCC 12 Vdc
TJ = 25°C
f = 1 MHz
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
+150 V, 10 mAdc
2.0 kW
50
12 V
2.0 ms
1.0 kHz
100
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
D.U.T.
+
4.0 mF
2N6277
1.0 CARBON
1N5817
Figure 11. Test Circuit for dv/dt and Reverse Surge Current
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MBRJ2045CTG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBRJ2045CTG | Power Rectifier | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |