Datasheet.kr   

NSBC144EPDXV6 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NSBC144EPDXV6은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 NSBC144EPDXV6 자료 제공

부품번호 NSBC144EPDXV6 기능
기능 Complementary Bias Resistor Transistors
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


NSBC144EPDXV6 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

NSBC144EPDXV6 데이터시트, 핀배열, 회로
MUN5313DW1,
SMUN5313DW1,
NSBC144EPDXV6,
NSBC144EPDP6
Complementary Bias
Resistor Transistors
R1 = 47 kW, R2 = 47 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
MUN5313DW1T1G,
SMUN5313DW1T1G
SOT363
3,000/Tape & Reel
SMUN5313DW1T3G
SOT363 10,000/Tape & Reel
NSBC144EPDXV6T1G
NSVB144EPDXV6T1G
SOT563
4,000/Tape & Reel
NSBC144EPDXV6T5G
SOT563
8,000/Tape & Reel
NSBC144EPDP6T5G
SOT963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 1
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT363
CASE 419B
6
13 M G
G
1
SOT563
CASE 463A
13 M G
G
1
SOT963
CASE 527AD
MG
1G
13/K
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTC144EP/D




NSBC144EPDXV6 pdf, 반도체, 판매, 대치품
MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
TYPICAL CHARACTERISTICS NPN TRANSISTOR
MUN5313DW1, NSBC144EPDXV6
10
IC/IB = 10
1
0.1
1000
TA = 25°C
25°C
75°C
100
VCE = 10 V
TA = 75°C
25°C
25°C
0.01
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 10 kHz
IE = 0 A
TA = 25°C
100
10 75°C
1
0.1
25°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.01
0.001
50 0
VO = 5 V
246
Vin, INPUT VOLTAGE (V)
8
10
Figure 5. Output Current vs. Input Voltage
100
VO = 0.2 V
10
TA = 25°C
25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
http://onsemi.com
4

4페이지










NSBC144EPDXV6 전자부품, 판매, 대치품
MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
TYPICAL CHARACTERISTICS PNP TRANSISTOR
NSBC144EPDP6
1
IC/IB = 10
1000
25°C
150°C
25°C
0.1
150°C
55°C
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) vs. IC
100
10
1
50 0.1
55°C
VCE = 10 V
1 10
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
100
7 100
f = 10 kHz
150°C
6 IE = 0 A
TA = 25°C
10
55°C
5 25°C
41
3 0.1
2
0.01
1 VO = 5 V
0 0.001
0 10 20 30 40 50
04
8 12 16 20 24 28
VR, REVERSE VOLTAGE (V)
Figure 19. Output Capacitance
Vin, INPUT VOLTAGE (V)
Figure 20. Output Current vs. Input Voltage
100
25°C
10
55°C
1 150°C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
http://onsemi.com
7

7페이지


구       성 총 10 페이지수
다운로드[ NSBC144EPDXV6.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NSBC144EPDXV6

Complementary Bias Resistor Transistors

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵