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부품번호 | FDS5692Z 기능 |
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기능 | N-Channel UltraFET Trench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
February 2006
FDS5692Z
N-Channel UltraFET Trench® MOSFET
50V, 5.8A, 24mΩ
General Description
Features
This N-Channel UltraFET device has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low rDS(on) and fast switching speed.
Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A
Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A
ESD protection diode (note 3)
Applications
Low Qgd
DC/DC converter
Fast switching speed
D
D
D
D
SO-8
G
SS
S
5
6
7
8
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
EAS Single Pulse Avalanche Energy
PD UltraFET Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDS5692Z
FDS5692Z
SO-8
13”
©2006 Fairchild Semiconductor Corporation
FDS5692Z Rev C(W)
4
3
2
1
Ratings
50
± 20
5.8
40
72
2.5
1.2
1.1
–55 to 150
50
125
25
Units
V
V
A
mJ
W
°C
°C/W
Tape width
12mm
Quantity
2500units
www.fairchildsemi.com
Typical Characteristics
40
VGS = 10V
32
6.0V
24
4.5V
4.0V
3.5.V
16
8
0
0
3.0V
123
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5V
4
Figure 1. On-Region Characteristics.
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 3.0V
3.5V
4.0V
4.5V
5.0V
6.0V
10V
10 20 30
ID, DRAIN CURRENT (A)
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
ID = 5.8A
1.8 VGS = 5V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.09
0.07
ID = 2.9A
0.05
TA = 125oC
0.03
TA = 25oC
0.01
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
40
VDS = 5V
30
20
TA = -55oC
125oC
25oC
10
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS5692Z Rev C(W)
www.fairchildsemi.com
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS5692Z | N-Channel UltraFET Trench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |