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부품번호 FDD5810_F085 기능
기능 N-Channel Logic Level Trench MOSFET
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FDD5810_F085 데이터시트, 핀배열, 회로
May 2010
FDD5810_F085
N-Channel Logic Level Trench® MOSFET
60V, 36A, 27m:
Features
„ RDS(ON) = 22m: Typ.), VGS = 5V, ID = 29A
„ Qg(5) = 13nC (Typ.), VGS = 5V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse / Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Motor / Body Load Control
„ ABS Systems
„ Powertrain Management
„ Injection System
„ DC-DC converters and Off-line UPS
„ Distributed Power Architecture and VRMs
„ Primary Switch for 12V and 24V systems
AD FREE I
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
©2010 Fairchild Semiconductor Corporation
FDD5810_F085 Rev. A1 (W)
1
www.fairchildsemi.com




FDD5810_F085 pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25°C unless otherwise noted
1.2 40
1.0
30
0.8 VGS = 10V
0.6 20 VGS = 5V
0.4
10
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RTJC + TC
10-1
100
Figure 3. Normalized Maximum Transient Thermal Impedance
101
600
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
VGS = 5V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
FDD5810_F085 Rev. A1 (W)
4
www.fairchildsemi.com

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FDD5810_F085 전자부품, 판매, 대치품
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Rev. I48
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부품번호상세설명 및 기능제조사
FDD5810_F085

N-Channel Logic Level Trench MOSFET

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