Datasheet.kr   

MBRB1635 데이터시트 PDF




Vishay에서 제조한 전자 부품 MBRB1635은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MBRB1635 자료 제공

부품번호 MBRB1635 기능
기능 Schottky Barrier Rectifier ( Diode )
제조업체 Vishay
로고 Vishay 로고


MBRB1635 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 5 페이지수

미리보기를 사용할 수 없습니다

MBRB1635 데이터시트, 핀배열, 회로
www.vishay.com
MBR16xx, MBRF16xx, MBRB16xx
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AC
ITO-220AC
MBR16xx
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
2
1
MBRF16xx
PIN 1
PIN 2
1
MBRB16xx
PIN 1
2
K
PIN 2
HEATSINK
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
16 A
35 V to 60 V
150 A
0.57 V, 0.65 V
150 °C
TO-220AC, ITO-220AC,
TO-263AB
Diode variations
Single die
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR1635
MBR1645
MBR1650
MBR1660
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
Maximum average forward rectified current
at TC = 125 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VDC
IF(AV)
IFSM
35
45
16
150
50
60
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
IRRM
1.0
0.5
Voltage rate of change (rated VR)
dV/dt
10 000
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
TJ
TSTG
VAC
- 65 to + 150
- 65 to + 175
1500
UNIT
V
A
V/μs
°C
V
Revision: 20-Jan-14
1 Document Number: 88671
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




MBRB1635 pdf, 반도체, 판매, 대치품
www.vishay.com
MBR16xx, MBRF16xx, MBRB16xx
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
PIN
12
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
PIN 1
PIN 2
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
CASE
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AC
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
PIN
12
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 20-Jan-14
4 Document Number: 88671
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지












구       성 총 5 페이지수
다운로드[ MBRB1635.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MBRB1635

Schottky Rectifier ( Diode )

General Semiconductor
General Semiconductor
MBRB1635

Schottky Rectifier ( Diode )

IRF
IRF

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵