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MBR7H60 데이터시트 PDF




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부품번호 MBR7H60 기능
기능 Schottky Barrier Rectifier ( Diode )
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MBR7H60 데이터시트, 핀배열, 회로
www.vishay.com
MBR7Hxx, MBRF7Hxx, MBRB7Hxx
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved HighTemperature Performance
TO-220AC
ITO-220AC
MBR7Hxx
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
2
1
MBRF7Hxx
PIN 1
PIN 2
1
MBRB7Hxx
PIN 1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
7.5 A
35 V, 45 V, 50 V, 60 V
150 A
0.55 V, 0.61 V
50 μA
175 °C
TO-220AC, ITO-220AC,
TO-263AB
Diode variations
Single
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR7H35 MBR7H45 MBR7H50 MBR7H60
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig.1)
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L =10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRWM
VDC
IF(AV)
EAS
IFSM
35
35
35
45
45
45
7.5
80
150
50
50
50
60
60
60
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kW
IRRM
ERSM
VC
1.0 0.5
20 10
25
Operating junction and storage temperature range
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AC only) from terminal to heatsink
t = 1 min
TJ, TSTG
dV/dt
VAC
- 65 to + 175
10 000
1500
UNIT
V
A
mJ
A
mJ
kV
°C
V/μs
V
Revision: 13-Aug-13
1 Document Number: 88796
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




MBR7H60 pdf, 반도체, 판매, 대치품
www.vishay.com
MBR7Hxx, MBRF7Hxx, MBRB7Hxx
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
PIN
12
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
PIN 1
PIN 2
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
CASE
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AC
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
PIN
12
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 13-Aug-13
4 Document Number: 88796
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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관련 데이터시트

부품번호상세설명 및 기능제조사
MBR7H60

Schottky Barrier Rectifier ( Diode )

Vishay
Vishay

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