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PDF SBE813 Data sheet ( Hoja de datos )

Número de pieza SBE813
Descripción Schottky Barrier Diode
Fabricantes ON Semiconductor 
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No Preview Available ! SBE813 Hoja de datos, Descripción, Manual

Ordering number : EN8967A
SBE813
Schottky Barrier Diode
30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode
http://onsemi.com
Applications
High frequency rectication (switching regulators, converters, choppers)
Features
Small switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package permitting applied sets to be small and slim
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRRM
VRSM
IO
IFSM
Tj
Storage Temperature
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
30
35
3.0
20
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7012-001
8 7 65
0.3
0.15 SBE813-TL-E
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
VEC8
SE
LOT No.
TL
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/32406SB MSIM TB-00002132 No.8967-1/6

1 page




SBE813 pdf
Outline Drawing
SBE813-TL-E
SBE813
Land Pattern Example
Mass (g) Unit
0.015
* For reference
mm
0.4
Unit: mm
0.65
No.8967-5/6

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