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부품번호 | EM48AM3284LBB 기능 |
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기능 | 512Mb (4M x 4Bank x 32) Mobile Synchronous DRAM | ||
제조업체 | Eorex | ||
로고 | |||
Revision History
Revision 0.1 (May. 2010)
- First release.
Revision 0.2 (Sep. 2010)
- Delete CL=2 parameters
- Input Leakage Current = -2μA ~ +2μA
- Change Supply Voltage Rating = -0.5 ~ +2.3
- Delete Deep Power Down Mode
- Change AC timing paramters: tRC & tIS
Revision 0.3 (Nov. 2010)
- Change clock input capacitance value
EM48AM3284LBB
Nov. 2010
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Pin Assignment
1
DQ26
DQ28
VSSQ
VSSQ
VDDQ
VSS
A4
A7
CLK
DQM1
VDDQ
VSSQ
VSSQ
DQ11
DQ13
2
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
EM48AM3284LBB
3
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
A12
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
7
A VDD
B VDDQ
C DQ22
D DQ17
E NC
F A2
G A10
H NC
J BA0
K /CAS
L VDD
M DQ6
N DQ1
P VDDQ
R VDD
90ball FBGA / (8mm x 13mm)
8
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BA1
/CS
/WE
DQ7
DQ5
DQ3
VSSQ
DQ0
9
DQ21
DQ19
VDDQ
VDDQ
VSSQ
VDD
A1
A11
/RAS
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
Nov. 2010
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4페이지 EM48AM3284LBB
Recommended DC Operating Conditions
(VDD=1.7~1.95V, TA=-25°C ~85°Cfor extended)
Symbol
Parameter
Test Conditions
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
Operating Current (Note 1)
Precharge Standby Current in
Power Down Mode
Precharge Standby Current in
Non-power Down Mode
Active Standby Current in Power
Down Mode
Active Standby Current in
Non-power Down Mode
Operating Current (Burst Mode)
(Note 2)
Burst length=1,
tRC≥tRC(min.), IOL=0mA,
One bank active
CKE≤VIL(max.), tCK=15ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=15ns,
/CS≥VIH(min.)
Input signals are changed one
time during 30ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
CKE≤VIL(max.), tCK=15ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=15ns,
/CS≥VIH(min.)
Input signals are changed one
time during 30ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
tCCD≥2CLKs, IOL=0mA
ICC5 Refresh Current (Note 3)
tRC≥tRC(min.)
ICC6 Slef Refresh Current
CKE≤ 0.2, Full Array, Internal
TCSR = 85°C
*All voltages referenced to VSS.
Note 1: ICC1 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 2: ICC4 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 3: Input signals are changed only one time during tCK (min.)
Speed
-6
70
1
1
5
2
3
3
15
10
130
90
0.6
Speed
-7.5
65
1
1
5
2
3
3
15
10
110
90
0.6
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
IIL Input Leakage Current
IOL Output Leakage Current
VOH High Level Output Voltage
VOL Low Level Output Voltage
Test Conditions
0≤VI≤VDDQ, VDDQ=VDD
All other pins not under test=0V
0≤VO≤VDDQ, DOUT is disabled
IO=-0.1mA
IO=+0.1mA
Min. Typ.
-2
-1.5
VDDQ-0.2
Max. Units
+2 uA
+1.5
0.2
uA
V
V
Nov. 2010
www.eorex.com
7/22
7페이지 | |||
구 성 | 총 22 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
EM48AM3284LBA | 512Mb (4M X 4Bank X 32) Synchronous DRAM | eorex |
EM48AM3284LBB | 512Mb (4M x 4Bank x 32) Mobile Synchronous DRAM | Eorex |
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